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BC182A

产品描述100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
产品类别半导体    分立半导体   
文件大小107KB,共5页
制造商CDIL
官网地址http://www.cdilsemi.com
下载文档 详细参数 选型对比 全文预览

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BC182A概述

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

100 mA, 50 V, NPN, 硅, 小信号晶体管, TO-92

BC182A规格参数

参数名称属性值
最大集电极电流0.1000 A
最大集电极发射极电压50 V
端子数量3
加工封装描述LEAD FREE PACKAGE-3
状态Active
结构SINGLE
最小直流放大倍数80
jedec_95_codeTO-92
jesd_30_codeO-PBCY-T3
jesd_609_codee0
moisture_sensitivity_levelNOT SPECIFIED
元件数量1
包装材料PLASTIC/EPOXY
包装形状ROUND
包装尺寸CYLINDRICAL
eak_reflow_temperature__cel_240
larity_channel_typeNPN
qualification_statusCOMMERCIAL
表面贴装NO
端子涂层TIN LEAD
端子形式THROUGH-HOLE
端子位置BOTTOM
ime_peak_reflow_temperature_max__s_30
晶体管应用AMPLIFIER
晶体管元件材料SILICON
额定交叉频率150 MHz
dditional_featureLOW NOISE

文档预览

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC182, A, B
BC183, A, B, C
BC184, B, C
TO-92
Plastic Package
C
BE
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at T
a
=25ºC
Derate Above 25ºC
Power Dissipation at T
c
=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
BC182
50
60
BC183
30
45
6.0
100
350
2.8
1.0
8.0
- 55 to +150
BC184
30
45
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
R
th (j-c)
R
th (j-a)
125
357
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL
V
CEO
TEST CONDITION
I
C
=2mA, I
B
=0
BC182
BC183/BC184
I
C
=10µA, I
E
=0
BC182
BC183/BC184
I
E
=100µA, I
C
=0
V
CB
=50V, I
E
=0
BC182
V
CB
=30V, I
E
=0
BC183/184
V
EB
=4V, I
C
=0
MIN
50
30
60
45
6.0
15
15
15
TYP
MAX
UNITS
V
V
V
V
V
nA
nA
nA
Collector Base Voltage
V
CBO
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
BC182_184Rev_1 201205E
V
EBO
I
CBO
I
EBO
Continental Device India Limited
Data Sheet
Page 1 of 5

BC182A相似产品对比

BC182A BC182 BC182B BC183 BC183A BC183B BC183C
描述 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 RF SMALL SIGNAL TRANSISTOR
状态 Active Active DISCONTINUED DISCONTINUED Active Active Active
最大集电极电流 0.1000 A 0.1000 A 0.1000 A 0.1000 A 0.1000 A 0.1000 A -
最大集电极发射极电压 50 V 50 V 50 V 30 V 50 V 50 V -
端子数量 3 3 3 3 3 3 -
加工封装描述 LEAD FREE PACKAGE-3 LEAD FREE PACKAGE-3 TO-92, 3 PIN - LEAD FREE PACKAGE-3 LEAD FREE PACKAGE-3 -
结构 SINGLE SINGLE 单一的 单一的 SINGLE SINGLE -
最小直流放大倍数 80 80 40 80 80 80 -
jedec_95_code TO-92 TO-92 - - TO-92 TO-92 -
jesd_30_code O-PBCY-T3 O-PBCY-T3 - - O-PBCY-T3 O-PBCY-T3 -
jesd_609_code e0 e0 - - e0 e0 -
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED -
元件数量 1 1 1 1 1 1 -
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY 塑料/环氧树脂 塑料/环氧树脂 PLASTIC/EPOXY PLASTIC/EPOXY -
包装形状 ROUND ROUND ROUND ROUND -
包装尺寸 CYLINDRICAL CYLINDRICAL 圆柱形的 圆柱形的 CYLINDRICAL CYLINDRICAL -
eak_reflow_temperature__cel_ 240 240 - - 240 240 -
larity_channel_type NPN NPN - - NPN NPN -
qualification_status COMMERCIAL COMMERCIAL - - COMMERCIAL COMMERCIAL -
表面贴装 NO NO - - NO NO -
端子涂层 TIN LEAD TIN LEAD 锡 银 铜 锡 铅 TIN LEAD TIN LEAD -
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-孔 THROUGH-孔 THROUGH-HOLE THROUGH-HOLE -
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
ime_peak_reflow_temperature_max__s_ 30 30 - - 30 30 -
晶体管应用 AMPLIFIER AMPLIFIER 放大器 放大器 AMPLIFIER AMPLIFIER -
晶体管元件材料 SILICON SILICON SILICON SILICON -
额定交叉频率 150 MHz 150 MHz 150 MHz 240 MHz 150 MHz 150 MHz -
dditional_feature LOW NOISE LOW NOISE - - LOW NOISE LOW NOISE -

 
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