ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
GBC327
Description
PNP SILICON TRANSISTOR
The GBC327 is designed for drive and output-stages of audio amplifiers.
Features
&
DC Current Gain: 100~630 @V
CE
=-1V, I
C
=-100mA
High
Package Dimensions
D
&
Complementary
to GBC337
E
S1
TO-92
A
S E A T IN G
PLANE
b1
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (continuous)
Total Device Dissipation @ T
A
=25 :
Derate above 25 :
Total Device Dissipation @ T
C
=25 :
Derate above 25 :
Operating and Storage Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
,
T
stg
R
JA
R
JC
Ratings
-50
-45
-5
-800
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/ :
W
mW/ :
:
: /W
: /W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
CES
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Cob
Min.
-50
-45
-50
-5
-
-
-
-
-
100
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
260
11
Max.
-
-
-
-
-100
-100
-100
-0.7
-1.2
630
-
-
-
Unit
V
V
V
V
nA
nA
nA
V
V
Test Conditions
I
C
=-100uA, I
E
=0
I
C
=-10mA, I
B
=0
I
C
=-100uA, I
E
=0
I
E
=-10uA, I
C
=0
V
CB
=-30V, I
E
=0
V
CE
=-45V, V
BE
=0
V
EB
=-4V, I
C
=0
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-300mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-300mA
V
CE
=-5V, I
C
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380 s, Duty Cycle 2%
MHz
pF
Classification Of h
FE
1
Rank
Range
A
100 ~ 250
B
160 ~ 400
C
250 ~ 630
GBC327
Page: 1/3
ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
Characteristics Curve
Fig 1. DC Current Gain
Fig 2. Saturation Region
Fig 3. “On” Voltages
Fig 4. Temperature Coefficients
Fig 5. Capacitances
Fig 6. Safe Operating Area
GBC327
Page: 2/3
ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
Fig 7. Thermal Response
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBC327
Page: 3/3
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