G B AV 7 0
Description
The GBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
1/3
Package Dimensions
Style : Pin1.Anode 2. Anode 3. Cathode
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF
.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Current
Repetitive Forward Current
Total Power Dissipation
Symbol
Tj
Tstg
Ratings
+150
-65~+150
80
200
500
225
Unit
PD
V
mA
mA
mW
Characteristics
Characteristic
at Ta = 25 :
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
-
Min.
80
-
-
-
-
-
Max.
-
715
855
1100
1300
5
1.5
15
Unit
V
mV
mV
mV
mV
uA
pF
nS
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=100mA
VR=80V
VR=0, f=1MHz
IF=IR=10mA, RL=100 Ł measured at
IR=1Ma,VR=5V
Test Conditions
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
2/3
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165
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