CORPORATION
G B AS16
Description
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A
ISSUED DATE :2002/10/28
REVISED DATE :2006/06/06C
S U R F A C E M O U N T, S W I T C H I N G D I O D E
The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount
package.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current (1ms)
Total Power Dissipation(Note1)
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Symbol
Tj
Tstg
V
R
V
RRM
I
O
I
FM
I
FSM
P
D
Ratings
+150
-65 ~ +150
85
85
250
500
1000
350
Unit
:
:
V
V
mA
mA
mA
mW
Electrical Characteristics
(at T
A
= 25 : unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
Symbol
V(
BR
)
V
F
(1)
Forward Voltage
V
F
(2)
V
F
(3)
V
F
(4)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
Trr
-
Min.
85
-
-
-
-
-
Max.
-
715
855
1000
1250
1
2
6
Unit
V
mV
mV
mV
mV
uA
pF
nS
I
R
=100uA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=85V
V
R
=0, f=1MHz
I
F
=I
R
=10mA, R
L
=100
measured at I
R
=1mA
Test Conditions
GBAS16
Page: 1/2
CORPORATION
Characteristics Curve
ISSUED DATE :2002/10/28
REVISED DATE :2006/06/06C
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBAS16
Page: 2/2
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