VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
C-16
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-201AD (C-16)
3.3 A
30 V, 40 V
See Electrical table
20 mA at 125 °C
150 °C
Single die
6.0 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-31DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.3
30/40
450
0.57
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-31DQ03
30
VS-31DQ03-M3
30
VS-31DQ04
40
VS-31DQ04-M3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 117 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.0 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.3
450
90
6.0
1.0
mJ
A
A
UNITS
Revision: 20-Sep-11
Document Number: 93319
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
See fig. 1
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
See fig. 4
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.57
0.71
0.51
0.62
1
20
190
9.0
10 000
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
SYMBOL
T
J
(1)
,
TEST CONDITIONS
VALUES
- 40 to 150
UNITS
°C
T
Stg
DC operation
Without cooling fin
With fin 20 mm x 20 mm (0.79" x 0.79")
1.0 mm (0.04") thickness
R
thJA
R
thJL
80
°C/W
15
1.2
0.042
g
oz.
31DQ03
31DQ04
Marking device
Note
(1)
Case style C-16
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 20-Sep-11
Document Number: 93319
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
150
I
F
- Instantaneous Forward Current (A)
100
DC
130
10
110
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
90
Square
wave (D = 0.50)
80 % Rated V
R
applied
see
note (1)
0.1
0
0.3
0.6
0.9
1.2
93319_04
70
0
1
2
3
4
5
93319_01
V
FM
- Forward Voltage Drop (V)
I
F(AV)
- Average Forward Current (A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
2.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
1
DC
I
R
- Reverse Current (mA)
10
Average Power Loss (W)
T
J
= 150 °C
2
1
T
J
= 125 °C
1.5
0.1
0.01
T
J
= 25 °C
0.001
0
10
20
30
40
0.5
0
0
93319_05
1
2
3
4
5
93319_02
V
R
- Reverse Voltage (V)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
1000
I
FSM
- Non-Repetitive Surge Current (A)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
100
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
10
10
100
1000
10 000
10
0
93319_03
40
80
120
160
200
V
R
- Reverse Voltage (V)
93319_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 3 - - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Maximum Non-Repetitive Surge Current
(2)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 20-Sep-11
Document Number: 93319
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
31
2
D
3
Q
4
04
5
TR
6
-M3
7
Vishay Semiconductors product
31 = Current Rating 3.3 A
D = DO-201 package
Q = Schottky Q.. series
04 = Voltage ratings
TR = Tape and reel package
None = Bulk package
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
03 = 30 V
04 = 40 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-31DQ03
VS-31DQ03TR
VS-31DQ03-M3
VS-31DQ03TR-M3
VS-31DQ04
VS-31DQ04TR
VS-31DQ04-M3
VS-31DQ04TR-M3
QUANTITY PER T/R
500
1200
500
1200
500
1200
500
1200
MINIMUM ORDER QUANTITY
500
1200
500
1200
500
1200
500
1200
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95242
www.vishay.com/doc?95304
www.vishay.com/doc?95338
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Revision: 20-Sep-11
Document Number: 93319
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-201AD (C-16)
DIMENSIONS
in millimeters (inches)
Ø 5.8 (0.23)
MAX.
Cathode band
21.0 (0.83) MIN.
(2 places)
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
10.0 (0.39)
MAX.
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
Revision: 29-Aug-11
Document Number: 95242
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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