SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0141, Rev. -
MUR620AX
Green products
MUR620AX ULTRAFAST RECTIFIERS
Applications:
•
•
•
Switching Power Supply
Power Switching Circuits
General Purpose
Features:
•
•
•
•
•
•
•
•
Low forward voltage drop
High current capability
High reliability
High Surge Current Capability
Plastic Case Material has UL Flammability Classification Rating 94V-O
This is a Pb
−
Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
DO-201AD
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0141, Rev. -
MUR620AX
Green products
Marking Diagram:
Where XXXXX is YYWWL
MUR
6
20
AX
SSG
YY
WW
L
= Device Type
= Forward Current (6A)
= Reverse Voltage (200V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions：Molding
resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MUR620AX
Package
DO-201AD
(Pb-Free)
Shipping
1250pcs / tape
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape
and Reel Packaging Specification.
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0141, Rev. -
MUR620AX
Green products
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase,half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
@T
A
= 105°C
Symbol
V
RRM
V
RWM
V
R
Io
I
FSM
V
FM1
I
R
Trr
R
θJA
C
J
T
STG
T
J
wt
MUR620AX
200
6.0
80
0.975
10
500
35
25
80
-55 to +150
-55 to +150
1.02
DO-201AD
Unit
V
A
A
V
µA
ns
K/W
pF
°C
°C
g
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage (per element)
@I
F
= 6.0A, T
J
=25°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage
@T
A
= 125°C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance Junction to Ambient (Note 2)
Typical Junction Capacitance (Note 3)
Max. Storage Temperature
Max. Junction Temperature
Approximate Weight
Case Style
Note: 1. Measured with I
F
=0.5A; I
R
=1.0A; I
RR
=0.25A.
2. Mount on Cu-Pad Size 16mm×16mm on P.C.B.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0141, Rev. -
MUR620AX
Green products
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0141, Rev. -
MUR620AX
Green products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
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