CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C966FP
Issued Date : 2014.05.13
Revised Date : 2014.05.15
Page No. : 1/ 8
MTE130N20FP
BV
DSS
I
D
@ V
GS
=10V
R
DS(ON)
@V
GS
=10V, I
D
=9A
200V
17A
150 mΩ(typ)
Features
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Insulating package, front/back side insulating voltage=2500V(AC)
•
RoHS compliant package
Symbol
MTE130N20FP
Outline
TO-220FP
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
MTE130N20FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE130N20FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C966FP
Issued Date : 2014.05.13
Revised Date : 2014.05.15
Page No. : 2/ 8
Limits
Unit
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V
(Note 1)
Continuous Drain Current @T
C
=100°C, V
GS
=10V
(Note 1)
Continuous Drain Current @T
A
=25°C, V
GS
=10V
(Note 2)
Continuous Drain Current @T
A
=70°C, V
GS
=10V
(Note 2)
Pulsed Drain Current @ V
GS
=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=1mH, I
D
=3.5 Amps,
V
DD
=50V
(Note 2)
T
C
=25°C
(Note 1)
T
C
=100°C
(Note 1)
Power Dissipation
T
A
=25°C
(Note 2)
T
A
=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
T
L
T
PKG
Tj, Tstg
200
±20
17*
12*
3.4
2.7
34*
3.5
6
50
25
2
1.3
300
260
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
3
62.5
Unit
°C/W
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation PDSM is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
MTE130N20FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
Min.
200
-
2.0
-
-
-
-
-
Typ.
-
0.2
3.1
12.5
-
-
-
150
20
4
8
8
37
21
38
936
83
32
4.7
-
-
0.87
75
225
Max.
-
-
4.0
-
±
100
1
10
195
-
-
-
-
-
-
-
-
-
-
-
17
34
1.2
-
-
Unit
V
V/°C
V
S
nA
μA
m
Ω
Test Conditions
Spec. No. : C966FP
Issued Date : 2014.05.13
Revised Date : 2014.05.15
Page No. : 3/ 8
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=9A
V
GS
=
±
20V
V
DS
=180V, V
GS
=0V
V
DS
=180V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=9A
nC
V
DS
=160V, I
D
=17A, V
GS
=10V
ns
V
DS
=100V, I
D
=17A, V
GS
=10V, R
G
=6
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
V
DS
=0V, f=1MHz
I
S
=17A, V
GS
=0V
V
GS
=0, I
F
=17A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTE130N20FP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
35
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C966FP
Issued Date : 2014.05.13
Revised Date : 2014.05.15
Page No. : 4/ 8
Brekdown Voltage vs Ambient Temperature
1.4
30
I
D
, Drain Current (A)
25
20
15
10
5
0
0
10V,9V,8V,7V,6V
1.2
1
0.8
0.6
0.4
5.5V
5V
4.
5V
V
GS
=4V
I
D
=250μA,
V
GS
=0V
3
6
9
12
V
DS
, Drain-Source Voltage(V)
15
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=4.5V
V
GS
=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
100
V
GS
=6V
V
GS
=10V
0.4
0.2
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
1000
2.8
I
D
=9A
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
900
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
800
700
600
500
400
300
200
100
0
0
2
2.4
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=9A
R
DS(ON)
@Tj=25°C : 150mΩtyp.
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTE130N20FP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
Spec. No. : C966FP
Issued Date : 2014.05.13
Revised Date : 2014.05.15
Page No. : 5/ 8
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
I
D
=1mA
1000
1
0.8
0.6
0.4
0.2
I
D
=250μA
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
100
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=100V
G
FS
, Forward Transfer Admittance(S)
V
GS
, Gate-Source Voltage(V)
10
8
V
DS
=40V
6
V
DS
=160V
4
1
V
DS
=10V
0.1
Ta=25°C
Pulsed
2
I
D
=17A
0
0.01
0.001
0.01
0.1
1
, Drain Current(A)
I
D
10
100
0
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
Maximum Safe Operating Area
100
Maximum Drain Current vs Case Temperature
20
18
I
D
, Maximum Drain Current(A)
R
DSON
Limited
10
μ
s
100μs
1ms
16
14
12
10
8
6
4
2
0
25
V
GS
=10V, R
θ
JC
=3°C/W
I
D
, Drain Current(A)
10
10ms
100ms
DC
0.1
T
C
=25°C, Tj=175°C
V
GS
=10V,
θ
JC
=3°C/W
Single Pulse
1
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTE130N20FP
CYStek Product Specification
微控制器 MCU
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