CYStech Electronics Corp.
N & P-Channel Enhancement Mode Power MOSFET
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 1/13
MTBA6C12J4
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
RoHS compliant & Halogen-free package
BV
DSS
I
D
@ V
GS
=10V(-10V)
R
DSON
(typ.) @V
GS
=(-)10V
R
DSON
(typ.) @V
GS
=(-)4.5V
N-CH
120V
2A
176 mΩ
183 mΩ
P-CH
-120V
-1.6A
246 mΩ
276 mΩ
Equivalent Circuit
MTBA6C12J4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings
(T
A
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V(-10V)
Continuous Drain Current @ T
C
=100°C, V
GS
=10V(-10V)
Continuous Drain Current @ T
A
=25°C, V
GS
=10V(-10V)
Continuous Drain Current @ T
A
=70°C, V
GS
=10V(-10V)
Pulsed Drain Current
*1
Total Power Dissipation (T
C
=25℃)
Total Power Dissipation (T
C
=100℃)
Total Power Dissipation (T
A
=25℃)
Total Power Dissipation (T
A
=70℃)
Operating Junction and Storage Temperature Range
V
DS
V
GS
(Note1)
(Note1)
(Note4)
(Note4)
(Note3)
(Note1)
(Note1)
(Note2)
(Note2)
I
D
I
DM
P
D
P
DSM
Tj, Tstg
120
±20
8.0
5.6
2.0
1.6
10
-120
±20
-6.8
-4.8
-1.6
-1.3
-8
V
A
25
12.5
2.4
1.7
-55~+175
W
°C
MTBA6C12J4
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 2/13
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
R
th,j-c
6
Thermal Resistance, Junction-to-ambient, max
(Note2)
62.5
°C/W
R
th,j-a
Thermal Resistance, Junction-to-ambient, max
(Note4)
90
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4.
When mounted on the minimum pad size recommended (PCB mount), t≤10s.
N-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
G
FS
*1
Dynamic
Qg *1
Qgs *1
Qgd *1
t
d(ON)
*1
tr
*1
t
d(OFF)
*1
t
f
*1
Ciss
Coss
Crss
Source-Drain Diode
I
S
*1
I
SM
*2
V
SD
*1
trr *
Qrr *
Min.
120
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
1.4
-
-
-
176
183
6.3
8
0.9
2.3
3.4
16.2
13.4
25.4
298
29
14
-
-
0.79
22
25
Max.
-
-
2.5
±100
1
10
230
250
-
-
-
-
-
-
-
-
-
-
-
2
10
1.3
-
-
Unit
V
V/°C
V
nA
μA
m
Ω
S
nC
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0V
V
DS
=96V, V
GS
=0V
V
DS
=96V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=2A
V
GS
=4.5V, I
D
=1.5A
V
DS
=10V, I
D
=2A
V
DS
=96V, I
D
=2A, V
GS
=10V
ns
V
DS
=75V, I
D
=1A, V
GS
=10V, R
G
=6
Ω
pF
V
DS
=25V, V
GS
=0V, f=1MHz
A
V
ns
nC
I
S
=2A, V
GS
=0V
I
F
=2A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
MTBA6C12J4
CYStek Product Specification
CYStech Electronics Corp.
P-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
*1
G
FS
*1
Dynamic
Qg *1
Qgs *1
Qgd *1
t
d(ON)
*1
tr
*1
t
d(OFF)
*1
t
f
*1
Ciss
Coss
Crss
Source-Drain Diode
I
S
*1
I
SM
*2
V
SD
*1
trr *
Qrr *
Min.
-120
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.09
-1.5
-
-
-
246
276
4.0
13.5
1.8
3.2
7
17
40
49
695
48
23
-
-
-0.76
19
19
Max.
-
-
-2.5
±100
-1
-10
310
340
-
-
-
-
-
-
-
-
-
-
-
-1.6
-8
-1.3
-
-
Unit
V
V/°C
V
nA
μA
m
Ω
S
nC
Test Conditions
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 3/13
V
GS
=0V, I
D
=-250μA
Reference to 25°C, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±20V, V
DS
=0V
V
DS
=-96V, V
GS
=0V
V
DS
=-96V, V
GS
=0V, Tj=55°C
V
GS
=-10V, I
D
=-1.5A
V
GS
=-4.5V, I
D
=-1.0A
V
DS
=-10V
,
I
D
=-1.5A
V
DS
=-96V, I
D
=-1.5A, V
GS
=-10V
ns
V
DS
=-75V, I
D
=-1A, V
GS
=-10V, R
G
=6
Ω
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
A
V
ns
nC
I
S
=-1.5A, V
GS
=0V
I
F
=1.5A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTBA6C12J4-0-T3-G
Package
TO-252
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA6C12J4
CYStek Product Specification
CYStech Electronics Corp.
Q1, N-CH Typical Characteristics
Typical Output Characteristics
10
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 4/13
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A,
V
GS
=0V
I
D
, Drain Current(A)
8
6
10V, 9V, 8V, 7V, 6V, 5V,4V,3.5V,3V
4
V
GS
=2.5V
2
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
1000
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=2.5V
V
GS
=3V
1
Tj=25°C
0.8
0.6
Tj=150°C
100
V
GS
=4.5V
10V
0.4
0.2
10
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
500
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
450
400
350
300
250
200
150
100
50
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=2A
2.8
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
2
V
GS
=4.5V, I
D
=1.5A,
R
DS(ON)
@Tj=25°C :183mΩ
1.6
1.2
V
GS
=10V, I
D
=2A
R
DS(ON)
@Tj=25°C : 176mΩ typ.
0.8
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTBA6C12J4
CYStek Product Specification
CYStech Electronics Corp.
Q1, N-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
1000
Ciss
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 5/13
Threshold Voltage vs Junction Tempearture
1.4
1.2
I
D
=1mA
Capacitance---(pF)
1
0.8
0.6
0.4
I
D
=250
μ
A
100
C
oss
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
100
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=96V
G
FS
, Forward Transfer Admittance(S)
10
V
GS
, Gate-Source Voltage(V)
8
V
DS
=60V
6
4
2
I
D
=2A
1
V
DS
=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
Maximum Safe Operating Area
100
I
D
, Maximum Drain Current(A)
2.5
2
1.5
1
0.5
0
1000
25
Maximum Drain Current vs Junction Temperature
I
D
, Drain Current(A)
10
R
DS(ON)
Limit
100
μ
s
1
1ms
10ms
100ms
T
A
=25°C, Tj=150°C, V
GS
=10V
R
θ
JA
=90°C/W,Single Pulse
1s
DC
0.1
T
A
=25°C, Tj(max)=150°C,V
GS
=10V
R
θ
JA
=90°C/W
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
50
75
100
125
150
T
J
, Junction Temperature(°C)
175
MTBA6C12J4
CYStek Product Specification
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
