CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 1/9
MTB4D0N03ATV8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
BV
DSS
I
D @
V
GS
=10V
V
GS
=10V, I
D
=15A
R
DSON(TYP)
V
GS
=4.5V, I
D
=12A
30V
15A
4.7mΩ
6.7mΩ
Equivalent Circuit
MTB4D0N03ATV8
Outline
DFN3×3
Pin 1
G：Gate
D：Drain S：Source
Ordering Information
Device
MTB4D0N03ATV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
C
=25C
Continuous Drain Current @ V
GS
=10V, T
C
=100C
Continuous Drain Current @ V
GS
=10V, T
A
=25C
Continuous Drain Current @ V
GS
=10V, T
A
=70C
Pulsed Drain Current
Symbol
V
DS
V
GS
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 2/9
Limits
30
±20
43
27
15
12
140 *1
Unit
V
I
D
A
I
DM
Avalanche Energy @ L=0.1mH, I
D
=43A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
T
C
=25℃
T
C
=100℃
T
A
=25℃
T
A
=70℃
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
92.5
4.9
21
8.4
2.5 *2
1.6 *2
-55~+150
mJ
W
C
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
6
50
*2
Unit
C/W
C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice R
th,j-a
will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (T
C
=25C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
*1
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
1.8
25
-
-
-
4.7
6.7
1511
299
208
30
4.6
9.3
4.3
Max.
-
2.0
-
±100
1
25
7.0
10
-
-
-
-
-
-
-
Unit
V
S
nA
μA
mΩ
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=15A
V
GS
=±20V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0, Tj=125C
V
GS
=10V, I
D
=15A
V
GS
=4.5V, I
D
=12A
Dynamic
Ciss
Coss
Crss
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
Rg
MTB4D0N03ATV8
pF
V
DS
=15V, V
GS
=0V, f=1MHz
nC
Ω
V
DS
=15V, V
GS
=10V, I
D
=15A
V
DS
=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25C, unless otherwise specified)
Symbol
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
Typ.
8
11
28
13
-
-
0.81
14
7
Max.
-
-
-
-
4
16
1.2
-
-
Unit
ns
Test Conditions
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 3/9
V
DS
=15V, I
D
=15A, V
GS
=10V, R
GS
=3Ω
A
V
ns
nC
I
S
=15A, V
GS
=0V
I
F
=15A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
300μs,
Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
140
120
10V,9V,8V,7V,6V,5V
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
100
80
60
40
20
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
V
GS
=3V
V
GS
=4V
V
GS
=3.5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
I
D
, Drain Current (A)
I
D
=250μA,
V
GS
=0V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
100
V
GS
=3V
Tj=150°C
10
V
GS
=4.5V
V
GS
=10V
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
I
D
=15A
2.4
V
GS
=10V, I
D
=15A
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
160
120
80
40
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
1.6
1.2
0.8
0.4
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
R
DSON
@ Tj=25°C
: 4.7 mΩ typ
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
G S(th)
, Normalized Threshold Voltage
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
10000
Ciss
1.2
1
0.8
0.6
0.4
I
D
=250μA
I
D
=1mA
Capacitance---(pF)
1000
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
Gate Charge Characteristics
V
DS
=15V
G
FS
, Forward Transfer Admittance(S)
10
V
GS
, Gate-Source Voltage(V)
8
V
DS
=10V
6
V
DS
=5V
1
4
2
0.1
V
DS
=5V
Ta=25°C
Pulsed
I
D
=15A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
4
8
12
16
20
24
Qg, Total Gate Charge(nC)
28
32
Maximum Safe Operating Area
1000
Maximum Drain Current vs Junction Temperature
18
100
I
D
, Maximum Drain Current(A)
R
DSON
Limite
100μs
1ms
10ms
100ms
T
A
=25°C, Tj=150°C
V
GS
=10V, R
θJA
=50°C/W
Single Pulse
1s
DC
16
14
12
10
8
6
4
2
0
25
T
A
=25°C, V
GS
=10V, R
θJA
=50°C/W
I
D
, Drain Current(A)
10
1
0.1
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTB4D0N03ATV8
CYStek Product Specification
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
