CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date :
Page No. : 1/9
MTB1D7N03ATH8
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Dynamic dv/dt rating
•
Pb-free lead plating and Halogen-free package
BV
DSS
I
D
@V
GS
=10V
R
DS(ON)
@V
GS
=10V, I
D
=30A
R
DS(ON)
@V
GS
=4.5V, I
D
=20A
30V
90A
1.5 mΩ(typ)
2.1 mΩ(typ)
Symbol
MTB1D7N03ATH8
Outline
DFN5×6
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTB1D7N03ATH8-0-T6-G
Package
DFN 5
×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB1D7N03ATH8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V
Continuous Drain Current @ T
C
=100°C, V
GS
=10V
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
Continuous Drain Current @ T
A
=70°C, V
GS
=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=77A, R
G
=25Ω
T
C
=25℃
T
C
=100℃
Total Power Dissipation
T
A
=25℃
T
A
=70℃
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
Tj, Tstg
30
±20
90
57
20
16
360
*1
77
295
50
20
2.5
1.6
-55~+150
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
2.5
50
*3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
Dynamic
Ciss
Coss
Crss
MTB1D7N03ATH8
Min.
30
1.0
-
-
-
-
-
-
-
-
-
Typ.
-
1.9
58
-
-
-
1.5
2.1
5385
935
854
Max.
-
2.5
-
±
100
1
25
2.2
4.0
-
-
-
Unit
V
V
S
nA
μA
m
Ω
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=20A
V
GS
=
±
20V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=20A
*1
pF
V
GS
=0V, V
DS
=15V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
53
16
25
16
21
76
32
1.6
-
-
0.79
28
23
Max.
-
-
-
-
-
-
-
-
90
360
1.2
-
-
Unit
nC
Test Conditions
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date :
Page No. : 3/9
V
DS
=15V, V
GS
=4.5V, I
D
=15A
ns
Ω
V
DS
=15V, I
D
=1A, V
GS
=10V, R
G
=3.3Ω
V
GS
=15mV, V
DS
=0V, f=1MHz
A
V
ns
nC
I
S
=20A, V
GS
=0V
I
F
=20A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB1D7N03ATH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
360
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
300
I
D
, Drain Current(A)
240
180
120
60
10V, 9V, 8V, 7V, 6V, 5V, 4.5V
1.2
1
0.8
0.6
0.4
I
D
=250μA,
V
GS
=0V
V
GS
=4V
V
GS
=3.5V
V
GS
=3V
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
100
V
GS
=3V
0.8
0.6
Tj=125°C
10
V
GS
=4.5V
V
GS
=10V
0.4
0.2
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
90
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=30A
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
100
2.8
2.4
2
1.6
1.2
0.8
0.4
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
R
DS(ON)
@Tj=25°C : 1.5mΩ typ.
V
GS
=10V, I
D
=30A
MTB1D7N03ATH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, NormalizedThreshold Voltage
10000
1.4
1.2
1
0.8
0.6
0.4
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
C
oss
I
D
=1mA
1000
Crss
I
D
=250
μ
A
100
100
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2
0
V
DS
=15V
I
D
=15A
10
1
V
DS
=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
V
GS
, Gate-Source Voltage(V)
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
10
20
30
40
Total Gate Charge---Qg(nC)
50
60
Maximum Safe Operating Area
1000
100
μ
s
Maximum Drain Current vs Case Temperature
120
I
D
, Maximum Drain Current(A)
100
80
60
40
20
0
I
D
, Drain Current(A)
100
R
DS(ON)
Limit
1ms
10ms
100ms
1s
10
T
C
=25°C, Tj=150°C,
V
GS
=10V, R
θ
JC
=2.5°C/W
Single Pulse
1
DC
V
GS
=10V, R
θJC
=2.5°C/W
0.1
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTB1D7N03ATH8
CYStek Product Specification
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