CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C970J3
Issued Date : 2014.06.14
Revised Date : 2014.06.16
Page No. : 1/9
MTB060N15J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V
R
DS(ON)
@V
GS
=10V, I
D
=4A
R
DS(ON)
@V
GS
=4.5V, I
D
=2A
150V
16A
59mΩ(typ)
60mΩ(typ)
Equivalent Circuit
MTB060N15J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G
D S
Ordering Information
Device
MTB060N15J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB060N15J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C970J3
Issued Date : 2014.06.14
Revised Date : 2014.06.16
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V
Continuous Drain Current @ T
C
=100°C, V
GS
=10V
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
Continuous Drain Current @ T
A
=100°C, V
GS
=10V
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
Continuous Drain Current @ T
A
=100°C, V
GS
=10V
Pulsed Drain Current
*1
Avalanche Current
Avalanche Energy @ L=12mH, I
D
=9.8A, R
G
=25Ω
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
C
=100℃
Total Power Dissipation @T
A
=25℃
Total Power Dissipation @T
A
=100℃
Total Power Dissipation @T
A
=25℃
Total Power Dissipation @T
A
=100℃
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
*2
*2
*3
*3
I
DSM
I
DM
I
AS
E
AS
P
D
*2
*2
*3
*3
P
DSM
Tj, Tstg
150
±20
16
11.3
3.8
2.4
3.1
2.0
48
9.8
576
50
25
2.5
1.0
1.7
0.7
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
*2
Thermal Resistance, Junction-to-ambient, max
*3
Note : *1
.
Pulse width limited by maximum junction temperature
Symbol
R
th,j-c
R
th,j-a
Value
3
50
75
Unit
°C/W
*2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper.
*3. When the device is
on the minimum pad size recommended.
*4. The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
*5. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150
°
C. The value
in any given application depends on the user’s specific board design, and the maximum temperature of 175
°
C may
be used if the PCB allows it.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
G
FS
*1
I
GSS
MTB060N15J3
Min.
150
-
1.0
-
-
Typ.
-
0.15
1.4
21
-
Max.
-
-
2.5
-
±
100
Unit
V
V/°C
V
S
nA
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=10V, I
D
=4A
V
GS
=
±
20V, V
DS
=0V
CYStek Product Specification
CYStech Electronics Corp.
I
DSS
R
DS(ON)
*1
Spec. No. : C970J3
Issued Date : 2014.06.14
Revised Date : 2014.06.16
Page No. : 3/9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
59
60
28
5.1
10.7
12
15
70
100
1957
111
53
1.3
-
-
0.75
61
150
1
25
75
80
-
-
-
-
-
-
-
-
-
-
-
16
48
1.2
-
-
μA
m
Ω
V
DS
=150V, V
GS
=0V
V
DS
=150V, V
GS
=0, Tj=55°C
V
GS
=10V, I
D
=4A
V
GS
=4.5V, I
D
=2A
I
D
=16A, V
DS
=120V, V
GS
=4.5V
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
nC
ns
V
DS
=75V, I
D
=16A, V
GS
=10V, R
G
=6
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=15mV,V
DS
=0, f=1MHz
I
S
=4A, V
GS
=0V
I
F
=14A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB060N15J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
48
40
I
D
, Drain Current (A)
10V,9V,8V,7V,6V,5V,4V,3
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C970J3
Issued Date : 2014.06.14
Revised Date : 2014.06.16
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
32
24
16
8
0
0
3
6
9
12
V
DS
, Drain-Source Voltage(V)
15
V
GS
=2V
2.5V
I
D
=250μA,
V
GS
=0V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
10000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
1000
V
GS
=2V
V
GS
=2.5V
V
GS
=3V
V
GS
=4.5V
V
GS
=10V
0.8
0.6
0.4
0.2
Tj=150°C
100
10
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
1000
3
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=4A
800
600
400
200
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.5
2
1.5
1
0.5
0
-65
V
GS
=10V, I
D
=4A
R
DS(ON)
@Tj=25°C : 59mΩ
-35
-5
25
55
85 115
Tj, Junction Temperature(°C)
145
175
MTB060N15J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
Ciss
Spec. No. : C970J3
Issued Date : 2014.06.14
Revised Date : 2014.06.16
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
I
D
=1mA
Capacitance---(pF)
1000
C
oss
1
0.8
0.6
0.4
I
D
=250μ
A
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
100
-65
-35
-5
25
55
85
115
145
175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
G
FS
, Forward Transfer Admittance(S)
V
GS
, Gate-Source Voltage(V)
10
8
6
1
V
DS
=10V
4
2
V
DS
=120V
I
D
=16A
0.1
Ta=25°C
Pulsed
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
10
20
30
40
50
60
Qg, Total Gate Charge(nC)
70
80
Maximum Safe Operating Area
100
Maximum Drain Current vs Case Temperature
20
18
I
D
, Maximum Drain Current(A)
100μ
s
I
D
, Drain Current(A)
10
R
DSON
Limited
1ms
10ms
100ms
16
14
12
10
8
6
4
2
0
25
V
GS
=10V, R
θ
JC
=3°C/W
1
1s
DC
0.1
T
C
=25°C, Tj=175°C
V
GS
=10V,
θ
JC
=3°C/W
Single Pulse
0.01
0.1
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
50
75
100
125
150
175
T
C
, Case Temperature(°C)
MTB060N15J3
CYStek Product Specification
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