CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 1/8
BTC2383K3
Features
BV
CEO
I
C
R
CESAT(MAX)
160V
1A
1Ω
•
High breakdown voltage , BV
CEO
=160V
•
Low Saturation Voltage, V
CE(sat)
=0.2V(typ)@I
C
=500mA, I
B
=50mA
•
Complementary to BTA1013K3
•
Pb-free lead plating and halogen-free package
Symbol
BTC2383K3
Outline
TO-92L
B：Base
C：Collector
E：Emitter
Ordering Information
Device
BTC2383K3-0-TB-G
BTC2383K3-0-BM-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / tape & box
500 pcs / bag, 10 bags/box,
10 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTC2383K3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(
Note 1)
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 2/8
Limits
200
160
6
1
3
0.5
Unit
V
A
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature and Storage Range
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
P
D
R
θJA
Tj ; Tstg
900
139
-55~+150
mW
°C/W
°C
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
R
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
Cob
Min.
200
160
6
-
-
-
-
-
0.45
160
100
-
Typ.
270
210
7.4
15
2
200
0.4
0.9
0.62
-
180
6.2
Max.
-
-
-
100
100
500
1
1.2
0.75
320
-
20
Unit
V
V
V
nA
nA
mV
Ω
V
V
-
MHz
pF
Test Conditions
I
C
=100μA
I
C
=10mA
I
E
=100μA
V
CB
=200V
V
EB
=6V
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=5mA
V
CE
=5V, I
C
=100mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
*
*
*
*
*
BTC2383K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.18
0.16
IC, Collector Current(A)
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
500uA
400uA
300uA
200uA
IB=100uA
1mA
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 3/8
Emitter Grounded Output Characteristics
0.35
5mA
0.3
IC, Collector Current(A)
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
VCE, Collector-to-Emitter Voltage(V)
6
IB=500uA
2.5mA
1.5mA
Emitter Grounded Output Characteristics
0.6
0.5
20mA
Emitter Grounded Output Characteristics
0.9
0.8
50mA
IC, Collector Current(A)
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
VCE, Collector-to-Emitter Voltage(V)
10mA
8mA
6mA
4mA
IB=2mA
IC, Collector Current(A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10mA
IB=5mA
25mA
6
0
1
2
3
4
5
VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
VCE=1V
Current Gain vs Collector Current
1000
VCE=5V
Current Gain---HFE
Current Gain---HFE
100
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
IC, Collector Current(mA)
1000
10
1
10
100
IC, Collector Current(mA)
1000
BTC2383K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Current Gain vs Collector Current
1000
VCE=10V
1000
VCESAT@IC=10IB
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 4/8
Saturation Voltage vs Collector Current
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Saturation Voltage---(mV)
Current Gain---HFE
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10
100
IC, Collector Current(mA)
1000
10
1
10
100
IC, Collector Current(mA)
1000
Saturation Voltage vs Collector Current
10000
VBESAT@IC=50IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
On Voltage vs Collector Current
10000
VBEON@VCE=5V
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Saturation Voltage---(mV)
On Voltage---(mV)
1000
1000
100
1
10
100
IC, Collector Current(mA)
1000
100
1
10
100
IC, Collector Current(mA)
1000
Capacitance vs Reverse-biased Voltage
100
Power Derating Curve
1.2
Power Dissipation---PD(W)
0.9
Capacitance---(pF)
Cib
10
0.6
Cob
0.3
1
0.1
1
10
VR, Reverse-biased Voltage(V)
100
0
0
25
50
75
100
125
150
175
Ambient Temperature---TA(℃)
BTC2383K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---fT(MHz)
VCE=10V
Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
Page No. : 5/8
100
10
1
10
100
IC, Collector Current(mA)
1000
BTC2383K3
CYStek Product Specification
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