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VI20150SG

产品描述High Voltage Trench MOS Barrier Schottky Rectifier
文件大小155KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VI20150SG概述

High Voltage Trench MOS Barrier Schottky Rectifier

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V20150SG, VF20150SG, VB20150SG, VI20150SG
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.57 V at I
F
= 5 A
FEATURES
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
TO-220AB
®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
TO-262AA package)
and
2
V20150SG
PIN 1
3
1
VF20150SG
PIN 1
PIN 2
2
3
1
PIN 2
CASE
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PIN 3
PIN 3
TYPICAL APPLICATIONS
TO-262AA
TO-263AB
K
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
A
NC
1
VB20150SG
NC
A
K
HEATSINK
PIN 1
2
3
Case:
TO-220AB,
TO-262AA
ITO-220AB,
TO-263AB
and
VI20150SG
PIN 2
K
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variations
20 A
150 V
140 A
0.77 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Single
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V20150SG
VF20150SG
20
140
110
0.5
10 000
1500
- 55 to + 150
VB20150SG
150
VI20150SG
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 13-Aug-13
Document Number: 89060
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VI20150SG相似产品对比

VI20150SG V20150SG V20150SG_15 VB20150SG VF20150SG
描述 High Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier
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