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VI20120SG

产品描述High-Voltage Trench MOS Barrier Schottky Rectifier
文件大小129KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VI20120SG概述

High-Voltage Trench MOS Barrier Schottky Rectifier

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V20120SG, VI20120SG
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.54 V at I
F
= 5 A
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
K
TO-262AA
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• AEC-Q101 qualified
2
V20120SG
PIN 1
PIN 2
CASE
3
1
VI20120SG
PIN 1
2
3
1
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PIN 2
K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variation
20 A
120 V
150 A
0.78 V
150 °C
TO-220AB, TO-262AA
Single die
MECHANICAL DATA
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
V20120SG
120
20
150
10 000
-40 to +150
VI20120SG
UNIT
V
A
A
V/μs
°C
Revision: 25-Oct-13
Document Number: 89244
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VI20120SG相似产品对比

VI20120SG V20120SG V20120SG_15 VB20120SG VF20120SG
描述 High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier

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