MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
Low Leakage Current 5.0 μA
Dual Common Cathode High Voltage Schottky Rectifier
TO-220AB
ITO-220AB
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max., 10 s per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
1
2
3
1
2
3
MBR20H150CT
TO-262AA
MBRF20H150CT
TYPICAL APPLICATIONS
SB20H150CT-1
PIN 1
PIN 3
PIN 2
CASE
For use in high frequency inverters, freewheeling, and
polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
2 x 10 A
150 V
200 A
0.75 V
175 °C
1
2
3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variations
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
TO-220AB, ITO-220AB,
TO-262AA
Dual Common Cathode
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
E
RSM
E
AS
dV/dt
T
J
, T
STG
V
AC
MBR20H150CT
MBRF20H150CT
150
150
150
20
10
200
1.0
10
11.25
10 000
- 65 to + 175
1500
SB20H150CT-1
UNIT
V
V
V
A
A
A
mJ
mJ
V/μs
°C
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse current per diode
at t
p
= 2 μs, 1 kHz
Peak non-repetitive reverse surge energy per diode
(8/20 μs waveform)
Non-repetitive avalanche energy per diode at 25 °C,
I
AS
= 1.5 A, L = 10 mH
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to
heatsink t = 1 min
Revision: 13-Aug-13
Document Number: 88864
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 10 A
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
R (1)
V
F (1)
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
SYMBOL
VALUE
0.90
0.75
0.99
0.86
5.0
1.0
μA
mA
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
per diode
Maximum reverse current per diode
at working peak reverse voltage
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
MBR
2.2
MBRF
4.2
MBRB
2.2
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-262AA
(1)
PREFERRED P/N
MBR20H150CT-E3/45
MBRF20H150CT-E3/45
SB20H150CT-1E3/45
UNIT WEIGHT (g)
2.06
2.20
1.58
PACKAGE CODE
45
45
45
BASE QUANTITY
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Note
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
30
260
240
Peak Forward Surge Current (A)
Average Forward Current (A)
25
MBR, MBRB
20
MBRF
15
220
200
180
160
140
120
100
80
60
40
20
0
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
10
5
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve (Total)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 13-Aug-13
Document Number: 88864
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
10 000
100
Instantaneous Forward Current (A)
T
J
= 175 °C
10
T
J
= 125 °C
T
J
= 75 °C
1
T
J
= 25 °C
Junction Capacitance (pF)
1000
100
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10 000
100
1000
T
J
= 175 °C
T
J
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
100
10
MBRF
10
1
T
J
= 75 °C
1
MBR, MBRB
0.1
T
J
= 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Aug-13
Document Number: 88864
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
TO-220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
TYP.
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.154 (3.90)
0.138 (3.50)
0.331(8.40)
TYP.
0.634 (16.10)
0.618 (15.70)
0.638 (16.20)
0.598 (15.20)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100 (2.54)
TYP.
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
0.102 (2.60)
0.087 (2.20)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.067 (1.70)
TYP.
1
0.118 (3.00)
TYP.
PIN
2
3
ITO-220AB
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
DIA.
1.21 (3.08)
0.138 (3.50)
0.122 (3.10)
0.270 (6.88)
0.255 (6.48)
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
0.630 (16.00)
0.614 (15.60)
1
PIN
2
3
0.264 (6.70)
0.248 (6.50)
0.320 (8.12)
0.304 (7.72)
0.633 (16.07)
0.601 (15.67)
0.117 (2.96)
0.101 (2.56)
0.396 (10.05)
0.372 (9.45)
0.039 (1.00)
0.024 (0.60)
0.100
(2.54) TYP.
0.058 (1.47)
MAX.
0.200 (5.08)
TYP.
0.024 (0.60)
0.018 (0.45)
Revision: 13-Aug-13
Document Number: 88864
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.055 (1.40)
0.039 (1.00)
K
0.370 (9.40)
0.354 (9.00)
0.425 (10.80)
0.393 (10.00)
1
PIN
2
3
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.405 (10.28)
0.389 (9.88)
0.100
(2.54) TYP.
0.062 (1.57)
0.054 (1.37)
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
Revision: 13-Aug-13
Document Number: 88864
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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