CMUDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM7001
is an N-Channel Enhancement-mode Silicon MOSFET,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers Low rDS(ON) and
Low Theshold Voltage.
MARKING CODE: C7A
FEATURES:
SOT-523 CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
•
•
•
•
•
•
Power Dissipation 250mW
Low rDS(
ON
)
Low Threshold Voltage
Logic Level Compatible
Small, SOT-523 Surface Mount Package
Complementary Device: CMUDM8001
UNITS
V
V
mA
mA
mW
°C
UNITS
μA
μA
V
0.9
0.9
1.3
0.566
0.16
0.08
100
4.0
9.0
9.5
50
75
3.0
4.0
15
V
Ω
Ω
Ω
nC
nC
nC
mS
pF
pF
pF
ns
ns
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
20
10
100
200
250
-65 to +150
MAX
1.0
1.0
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=10V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
Qg(tot)
Qgs
Qgd
gFS
Crss
Ciss
Coss
ton
toff
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=4.0V,
VGS=2.5V,
ID=10mA
ID=10mA
20
0.6
VGS=1.5V, ID=1.0mA
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, ID=100mA
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDD=3.0V, VGS=2.5V,
VDD=3.0V, VGS=2.5V,
ID=10mA
ID=10mA
R3 (22-August 2011)
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