CMPDM8002A
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM8002A is a
P-Channel enhancement-mode MOSFET manufactured
by the P-Channel DMOS Process, designed for high
speed pulsed amplifier and driver applications.
MARKING CODE: C802A
FEATURES:
• Low rDS(ON)
• Low VDS(ON)
• Low threshold voltage
• Fast switching
• Logic level compatibility
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ
JA
50
50
20
280
280
1.5
1.5
350
-65 to +150
357
UNITS
V
V
V
mA
mA
A
A
mW
°C
°C/W
SOT-23 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=50V, VGS=0
IDSS
VDS=50V, VGS=0, TJ=125°C
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
VGS=10V, VDS=10V
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=115mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TJ=125°C
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, TJ=125°C
VDS =10V, ID=200mA
200
500
50
1.0
MAX
100
1.0
500
UNITS
nA
μA
μA
mA
V
2.5
1.5
0.15
1.3
2.5
4.0
3.0
5.0
V
V
V
V
Ω
Ω
Ω
Ω
mS
R2 (6-February 2015)
CMPDM8002A
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL
SYMBOL
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton, toff
CHARACTERISTICS
- Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
MAX
VDS=25V, VGS=0, f=1.0MHz
7.0
VDS=25V, VGS=0, f=1.0MHz
70
VDS=25V,
VDS=25V,
VDS=25V,
VGS=0, f=1.0MHz
VGS=4.5V, ID=100mA
VGS=4.5V, ID=100mA
15
0.72
0.25
0.16
20
UNITS
pF
pF
pF
nC
nC
nC
ns
VDS=25V, VGS=4.5V, ID=100mA
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
SOT-23 CASE - MECHANICAL OUTLINE
2
1
3
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: C802A
R2 (6-February 2015)
w w w. c e n t r a l s e m i . c o m
CMPDM8002A
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
SERVICES
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development / Multi Discrete Modules (MDM™)
• Bare Die Available for Hybrid Applications
LIMITATIONS AND DAMAGES DISCLAIMER:
In no event shall Central be liable for any collateral, indirect,
punitive, incidental, consequential, or exemplary damages in connection with or arising out of a purchase order
or contract or the use of products provided hereunder, regardless of whether Central has been advised of
the possibility of such damages. Excluded damages shall include, but not be restricted to: cost of removal or
reinstallation, rework, ancillary costs to the procurement of substitute products, loss of profits, loss of savings, loss
of use, loss of data, or business interruption. No claim, suit, or action shall be brought against Central more than
two (2) years after the related cause of action has occurred.
In no event shall Central’s aggregate liability from any warranty, indemnity, or other obligation arising out of or in
connection with a purchase order or contract, or any use of any Central product provided hereunder, exceed the
total amount paid to Central for the specific products sold under a purchase order or contract with respect to which
losses or damages are claimed. The existence of more than one (1) claim against the specific products sold to
Buyer under a purchase order or contract shall not enlarge or extend this limit.
Buyer understands and agrees that the foregoing liability limitations are essential elements of a purchase order
or contract and that in the absence of such limitations, the material and economic terms of the purchase order or
contract would be substantially different.
R2 (6-February 2015)
w w w. c e n t r a l s e m i . c o m
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