SEMICONDUCTOR
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
2
SMFB16
SCHOTTKY BARRIER TYPE DIODE
FEATURES
・For
Use in Low Voltage, High Frequency inverters, Free
Wheeling, and Polarity Protection Applications.
A
B
1
APPLICATION
・Switching
Power Supply.
・Reversed
Battery Connection Protection.
・DC/DC
Converter.
・Cellular
Phones.
C
D
H
G
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
G
H
MILLIMETERS
_
2.6 + 0.05
_
3.5+ 0.1
_
0.9 + 0.05
_
1.6 + 0.05
_
0.65+ 0.05
_
0.11+ 0.05
0 ~ 0.1
_
0.98+ 0.05
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum Repetitive Peak Reverse Voltage
Average Output Rectitifed Current
Peak One Cycle Surge Forward Current
(Non-Repetitive 60Hz)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
60
1
30
-65½150
-65½150
UNIT
V
A
A
℃
℃
SMF
Marking
Lot No.
S16
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Total Capacitance
SYMBOL
V
FM
I
RRM
C
T
R
th(j-1)
Thermal Resistance
R
th(j-a)
TEST CONDITION
I
FM
=1.0A
V
RRM
=Rated
V
R
=10V, f=1MHz
Junction to lead
Junction to ambient
(on a grass-epoxy board)
MIN.
-
-
-
-
-
TYP.
0.49
7
40
-
-
MAX.
0.55
50
-
20
℃/W
140
UNIT
V
㎂
pF
2011. 1. 28
Revision No : 1
E
F
E
1/2
SMFB16
I
F
- V
F
10
I
R
- V
R
LEAKAGE CURRENT I
R
(uA)
100,000
T
j
=125 C
FORWARD CURRENT I
F
(A)
10,000
1,000
100
10
1
0.1
0
10
20
30
40
50
60
T
j
=25 C
T
j
=75 C
1
T
a
= 125 C
T
a
= 75 C
0.1
T
a
= 25 C
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
FORWARD VOLTAGE V
F
(V)
REVERSE VOLTAGE V
R
(V)
AVERAGE FORWARD POWER DISSIPATION
P
F(AV)
(W)
P
F(AV)
- I
F(AV)
PEAK SURGE FORWARD CURRENT
I
FSM
(A)
0.6
0.5
DC
SURGE FORWARD CURRENT
(NON - REPETITIVE)
100
Ta=25 C
f=60Hz
80
60
40
20
0
1
10
NUMBER OF CYCLES
100
0.4
0.3
0.2
0.1
0
0
0.2
0.4
α=180
RECTANGULAR
WAVEFORM
0
α
360
CONDUCTION
ANGLE
α
0.6
0.8
1.0
1.2
AVERAGE FORWARD CURRENT I
F(AV)
(A)
2011. 1. 28
Revision No : 1
2/2
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