UNISONIC TECHNOLOGIES CO., LTD
MJE13009D
HIGH VOLTAGE
FAST-SWITCHING NPN POWER
TRANSISTOR
DESCRIPTION
The UTC
MJE13009D
is a high voltage fast-switching NPN
power transistor. It is characterized by high breakdown voltage,
high current capability, high switching speed and high reliability.
The UTC
MJE13009D
is intended to be used in a
energy-saving lights electronic ballast, high frequency switching
power supplies, high frequency power transforms or common
power amplifiers, etc.
NPN SILICON TRANSISTOR
FEATURES
* High Breakdown Voltage
* High Current Capability
* High Switching Speed
* High Reliability
* RoHS-Compliant Product
INTERNAL SCHEMATIC DIAGRAM
C (2)
B (1)
E (3)
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
MJE13009DL-TA3-T
MJE13009DG-TA3-T
Package
TO-220
Pin Assignment
1
2
3
B
C
E
Packing
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R203-041.A
MJE13009D
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C)
PARAMETER
Collector- Emitter Voltage (V
BE
=-1.5V)
Collector-Emitter Voltage (I
B
=0)
Emitter-Base Voltage
DC
Collector Current
Pulse(Note 2)
DC
Base Current
Pulse(Note 2)
DC
Emitter Current
Pulse(Note 2)
Total Power Dissipation
T
A
=25°C
Linear Derating Factor Above
Total Power Dissipation
T
C
=25°C
Linear Derating Factor Above
Operating Junction Temperature
Storage Temperature
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
J
T
STG
NPN SILICON TRANSISTOR
RATINGS
700
400
9
12
24
6
12
18
36
2
16
100
800
-65 ~ +150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
-65 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolu te maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.13
UNIT
°C /W
°C /W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
(Note)
Collector-Emitter Sustaining Voltage
Collect Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS
(Note)
DC Current Gain
SYMBOL
V
CEO(SUS)
I
CEV
I
EBO
h
FE
TEST CONDITIONS
I
C
=10mA, I
B
=0
V
CEV
=Rated Value,
V
BE(OFF)
= -1.5V
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=5A
V
CE
=5V, I
C
=8A
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=1.6A
I
C
=12A, I
B
=3A
I
C
=5A, I
B
=1A
Base -Emitter Saturation Voltage
ON CHARACTERISTICS
(Note)
Current Gain Bandwidth Product
Output Capacitance
V
BE(SAT)
I
C
=8A, I
B
=1.6A
T
C
=100°C
4
180
T
C
=100°C
MIN
400
T
C
=100°C
1
5
1
8
6
40
30
1
1.5
2
3
1.2
1.6
1.5
TYP
MAX UNIT
V
mA
mA
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
V
V
V
V
V
V
MH
Z
pF
f
T
C
OB
V
CE
=10V, I
C
=500mA, f=1MH
Z
V
CB
=10V, I
C
=0, f=0.1MH
Z
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-041.A
MJE13009D
SWITCHING CHARACTERISTICS
NPN SILICON TRANSISTOR
RESISTIVE LOAD
t
D
Delay Time
t
R
Rise Time
V
CC
=125V, I
C
=8A, I
B1
=I
B2
=1.6A,
t
P
=25μs, Duty Cycle≤1%
t
S
Storage Time
t
F
Fall Time
INDUCTIVE LOAD, CLAMPED
t
S
I
C
=8A, V
CLAMP
=300V,I
B1
=1.6A,
Voltage Storage Time
V
BE(OFF)
=5V, T
C
=100°C
t
C
Crossover Time
Note: Pulse Test: Pulse Width=300μs, Duty Cycle=2%.
0.06
0.45
1.3
0.2
0.92
0.12
0.1
1
3
0.7
2.3
0.7
μs
μs
μs
μs
μs
μs
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QW-R203-041.A
MJE13009D
TYPICAL CHARACTERISTICS
Collector Current vs. Collector-Emitter Voltage
120
100
80
60
40
20
0
0
200
400
600
800 1000
Collector-Emitter Voltage, V
CEV
(V)
NPN SILICON TRANSISTOR
Collector Current vs. Collector-Base Voltage
1200
1000
800
600
400
200
0
0
200
400
600
800 1000
Collector-Base Voltage, V
CB
(V)
Collector Current, I
C
(μA)
Collector Current, I
C
(mA)
Base Current, I
B
(mA)
Collector Current, I
C
(μA)
25
20
15
10
5
Collector Current vs. Collector-
Emitter Voltage
I
B
=1048μA
I
B
=848μA
I
B
=648μA
I
B
=448μA
I
B
=248μA
600
500
400
300
200
Collector Current vs. Collector-
Emitter Voltage
I
B
=25.75mA
I
B
=20.75mA
I
B
=15.75mA
I
B
=10.75mA
100
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V
CE
(V)
0
I
B
=5.75mA
1 2 3 4 5 6 7 8 9
Collector-Emitter Voltage, V
CE
(V)
0
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MJE13009D
TYPICAL CHARACTERISTICS (Cont.)
Collector Current vs. Collector-
Emitter Voltage
6
5
Collector Current, I
C
(A)
4
I
B
=329mA
3
2
I
B
=229mA
I
B
=129mA
I
B
=429mA
Collector Current, I
C
(A)
12
10
8
6
4
2
0
0
NPN SILICON TRANSISTOR
Collector Current vs. Collector-
Emitter Voltage
I
B
=856mA
I
B
=756mA
I
B
=656mA
I
B
=556mA
I
B
=456mA
I
B
=356mA
I
B
=256mA
I
B
=156mA
1
2
3
4
5
6
7
Collector-Emitter Voltage, V
CE
(V)
8
1
0
0
1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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