UNISONIC TECHNOLOGIES CO., LTD
MJE13003-P
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage and high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
NPN SILICON TRANSISTOR
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
-
MJE13003L-P-x-T60-K
MJE13003L-P-x-T6C-A-K
MJE13003L-P-x-T6C-F-K
MJE13003L-P-x-T6S-K
MJE13003L-P-x-T92-B
MJE13003L-P-x-T92-K
MJE13003L-P-x-T92-R
MJE13003L-P-x- T9N -B
MJE13003L-P-x- T9N -K
MJE13003L-P-x- T9N -R
MJE13003L-P-x-TM3-T
MJE13003L-P-x-TN3-R
Note: Pin assignment: B: Base
MJE13003L-P-x-T6C-A-K
Halogen-Free
MJE13003G-P-x-AB3-K
MJE13003G-P-x-T60-K
MJE13003G-P-x-T6C-A-K
MJE13003G-P-x-T6C-F-K
MJE13003G-P-x-T6S-K
MJE13003G-P-x-T92-B
MJE13003G-P-x-T92-K
MJE13003G-P-x-T92-R
MJE13003G-P-x-T9N-B
MJE13003G-P-x-T9N-K
MJE13003G-P-x-T9N-R
MJE13003G-P-x-TM3-T
MJE13003G-P-x-TN3-R
C: Collector
E: Emitter
Package
SOT-89
TO-126
TO-126C
TO-126C
TO-126S
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
TO-251
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
Packing
Tape Box
Bulk
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Green Package
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) refer to Pin Assignment (for TO-126C)
(3) T60: TO-126, T6C:TO-126C, T6S: TO-126S
T92: TO-92, T9N: TO-92NL, TM3: TO-251,
TN3: TO-252
(4) x: refer to Classification of h
FE1
(5) L: Lead Free, G: Halogen Free and Lead Free
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R204-027.F
MJE13003-P
MARKING
Package
Lot Code
NPN SILICON TRANSISTOR
MARKING
Date Code
SOT-89
MJE13003G
1
TO-220
TO-251
TO-251S
TO-252
TO-126
TO-126C
TO-126S
TO-92
TO-92NL
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-027.F
MJE13003-P
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage (V
BE
=0)
Collector-Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
SOT-89
TO-126 / TO-126C
TO-126S
TO-92 / TO-92NL
TO-251 / TO-252
SOT-89
TO-126 / TO-126C
TO-126S
TO-92 / TO-92NL
TO-251 / TO-252
SYMBOL
V
CEO(SUS)
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
NPN SILICON TRANSISTOR
RATINGS
400
700
700
9
1.5
3
0.75
1.5
2.25
4.5
0.5
1.4
1.1
1.56
1.64
20
UNIT
V
V
V
V
A
A
A
W
W
W
W
W
W
W
W
°C
°C
T
A
=25°C
Total Power Dissipation
T
C
=25°C
P
D
1.5
25
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R204-027.F
MJE13003-P
PARAMETER
OFF CHARACTERISTICS
(Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
T
C
=25°C
T
C
=100°C
SYMBOL
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified.)
TEST CONDITIONS
MIN TYP MAX UNIT
400
1
5
1
See Fig.5
See Fig.6
I
C
=0.4A, V
CE
=5V
I
C
=1A, V
CE
=5V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.2A, I
B
=0.4A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=100mA, V
CE
=10V, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
14
5
57
30
0.5
1
3
1
1
1.2
1.1
10
21
V
mA
mA
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS
(Note)
DC Current Gain
V
CEO(SUS)
I
C
=10 mA , I
B
=0
V
CEO
=Rated Value,
I
CEO
V
BE(OFF)
=1.5 V
I
EBO
V
EB
=9 V, I
C
=0
Is/b
RB
SOA
h
FE1
h
FE2
V
CE(SAT)
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test : PW=300μs, Duty Cycle≤2%
V
BE(SAT)
V
f
T
C
OB
4
MHz
pF
t
D
t
R
t
S
t
F
t
STG
t
C
t
F
V
CC
=125V, I
C
=1A, I
B1
=I
B2
=0.2A,
t
P
=25μs, Duty Cycle≤1%
0.05 0.1
0.5
1
2
4
0.4 0.7
1.7
4
0.29 0.75
0.15
μs
μs
μs
μs
μs
μs
μs
I
C
=1A, Vclamp=300V, I
B1
=0.2A,
V
BE(OFF)
=5Vdc, T
C
=100°C
CLASSIFICATION OF h
FE1
RANK
RANGE
A
14 ~ 22
B
21 ~ 27
C
26 ~ 32
D
31 ~ 37
E
36 ~ 42
F
41 ~ 47
G
46 ~ 52
H
51 ~ 57
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-027.F
MJE13003-P
APPLICATION INFORMATION
NPN SILICON TRANSISTOR
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V
1N4933
0.001μF
33
MJE210
L
MR826
Ic
I
B
T.U.T.
2N2905
47
1/2W
MJE200
100
-V
BE
(
OFF
)
5.1k
51
V
clamp
Vcc
Resistive
Switching
+125V
Rc
TUT
SELECTED FOR
V
CE
1kV
Test Circuits
5V
P
w
DUTY CYCLE 10%
t
R
, t
F
10ns
68
1k
33 1N4933
2N2222
1k
+5V
1N4933
0.02μF 270
1k
R
B
R
B
D1
-4.0V
SCOPE
Note:
P
W
and Vcc Adjusted for Desired I
c
R
B
Adjusted for Desired I
B1
Coil Data :
GAP for 30 mH/2 A
V
CC
=20V
Ferroxcube core #6656
Lcoil=50mH
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
Output Waveforms
V
CC
=125V
R
C
=125Ω
D1=1N5820 or
Equiv.
R
C
=47Ω
+10.3 V
25μS
Test Waveforms
Circuit
Values
0
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
R
B
and Rc adjusted
for desired I
B
and Ic
Table 2. Typical Inductive Switching Performance
Ic
(A)
0.5
Tc
(°C)
25
100
25
100
25
100
t
sv
(µs)
1.3
1.6
1.5
1.7
1.8
3
t
RV
(µs)
t
FI
(µs)
t
TI
(µs)
tc
(µs)
I
C
I
CPK
90% V
clamp
t
sv
t
RV
t
c
V
CLAMP
90% Ic
t
FI
t
TI
0.23 0.30
0.26 0.30
0.10
0.13
0.35 0.30
0.40 0.36
1
0.14 0.05 0.16
0.26 0.06 0.29
V
CE
I
B
90% I
B1
10% V
CLAMP
10%
I
CPK
2% Ic
1.5
0.07 0.10 0.05 0.16
0.08 0.22 0.08 0.28
Time
Fig.1 Inductive Switching Measurements
Note: All Data Recorded in the Inductive Switching
Circuit in Table 1
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QW-R204-027.F
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