Technical Data Sheet
5mm Infrared LED, T-1 3/4
HIR323C/H0
Features
․High
reliability
․High
radiant intensity
․Peak
wavelength
λp=850nm
․2.54mm
Lead spacing
․Low
forward voltage
․Pb
free
․This
product itself will remain within RoHS compliant version.
Descriptions
․EVERLIGHT’S
Infrared Emitting Diode(HIR323C/H0)
is a high intensity diode , molded in a water clear plastic
package.
․The
device is spectrally matched with phototransistor , photodiode
and infrared receiver module.
Applications
․Free
air transmission system
․Infrared
remote control units with high power requirement
․Infrared
applied system
․Smoke
detector
Device Selection Guide
LED Part No.
HIR323C/H0
Chip
Material
GaAlAs
Lens Color
Water clear
Everlight Electronics Co., Ltd.
Device No：CDIH-032-002
http://www.everlight.com
Prepared date：2008/2/27
Rev 1
Page: 1 of 7
Prepared by：dengxiaojun
Revision
:1
Release Date:2008-09-20 00:15:31.0
Expired Period: Forever
LifecyclePhase:
HIR323C/H0
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Continuous Forward Current
Peak Forward Current(*1)
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature（*2）
Power Dissipation at(or below)
25℃Free Air Temperature
Symbol
I
F
I
FP
V
R
T
opr
T
stg
T
sol
P
d
Rating
100
1.0
5
-40 ~ +85
-40 ~ +100
260
150
Units
mA
A
V
℃
℃
℃
mW
Notes:
*1:I
FP
Conditions--Pulse Width≦100μs and Duty≦1%.
*2:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：CDIH-032-002
http://www.everlight.com
Prepared date：2008/2/27
Rev 1
Page: 2 of 7
Prepared by：dengxiaojun
Revision
:1
Release Date:2008-09-20 00:15:31.0
Expired Period: Forever
LifecyclePhase:
HIR323C/H0
Electro-Optical Characteristics (Ta=25℃)
Parameter
Symbol
Condition
I
F
=20mA
I
F
=100mA
Radiant Intensity
Ie
Pulse Width≦100μs ,Duty≦1%
Min.
7.8
--
--
--
--
Typ.
11.0
120
800
850
45
1.45
Max.
67
--
--
--
--
1.65
2.40
5.25
10
--
Units
mW/sr
I
F
=1A
Pulse Width≦100μs ,Duty≦1%.
Peak Wavelength
Spectral
Bandwidth
λp
Δλ
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=100mA
nm
nm
Forward Voltage
V
F
Pulse Width≦100μs ,Duty≦1%
--
--
--
--
1.80
4.10
--
30
V
I
F
=1A
Pulse Width≦100μs ,Duty≦1%.
Reverse Current
View Angle
I
R
2θ1/2
V
R
=5V
I
F
=20mA
μA
deg
Everlight Electronics Co., Ltd.
Device No：CDIH-032-002
http://www.everlight.com
Prepared date：2008/2/27
Rev 1
Page: 3 of 7
Prepared by：dengxiaojun
Revision
:1
Release Date:2008-09-20 00:15:31.0
Expired Period: Forever
LifecyclePhase:
HIR323C/H0
Typical Electro-Optical Characteristics Curves
Fig.1 Forward Current vs.
Ambient Temperature
140
120
100
80
60
40
20
0
Fig.2 Spectral Distributio
n
100
80
60
40
20
0
I
F
=20mA
Ta=25° C
-40 -20 0
20
40
60
80
100
790 810 830 850 870 890 910 930 950
Fig.3 Peak Emission Wavelength vs
Ambient Temperature
900
Fig.4 Forward Current
vs. Forward Voltage
4
10
875
3
10
850
825
2
10
800
-25
0
25
50
75
100
1
10
0
1
2
3
4
5
6
7
8
Everlight Electronics Co., Ltd.
Device No：CDIH-032-002
http://www.everlight.com
Prepared date：2008/2/27
Rev 1
Page: 4 of 7
Prepared by：dengxiaojun
Revision
:1
Release Date:2008-09-20 00:15:31.0
Expired Period: Forever
LifecyclePhase:
HIR323C/H0
Typical Electro-Optical Characteristics Curves
Fig.5 Radiant Intensity vs.
Forward Current
Fig.6 Relative Radiant Intensity vs.
Angular Displacement
1000
Ie-Radiant Intensity(mW/sr)
-20
-10
0
10
20
30
100
1.0
10
40
50
60
70
80
0.6 0.4 0.2 0
0.2 0.4 0.6
0.9
0.8
0.7
0
10
0
10
1
10
2
10
3
10
4
IF-Forward Current (mA
)
Fig.7 Radiant Intensity vs.
Ambient Temperature(°C)
Fig.8
Relative
Forward Voltage vs.
Ambient Temperature(°C)
60
Ie-Radiant Intensity (mW/sr)
1.6
40
I
F
=20mA
1.4
I
F
=20mA
20
1.2
0
25
50
75
100
120
1
25
50
75
100
120
Everlight Electronics Co., Ltd.
Device No：CDIH-032-002
http://www.everlight.com
Prepared date：2008/2/27
Rev 1
Page: 5 of 7
Prepared by：dengxiaojun
Revision
:1
Release Date:2008-09-20 00:15:31.0
Expired Period: Forever
LifecyclePhase:
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