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CAT24C04LE-G

产品描述2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8
产品类别存储    存储   
文件大小238KB,共21页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
下载文档 详细参数 选型对比 全文预览

CAT24C04LE-G概述

2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8

2K × 1 I2C/2-线 串行 电可擦除只读存储器, PDSO8

CAT24C04LE-G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
零件包装代码DIP
包装说明DIP, DIP8,.3
针数8
Reach Compliance Codeunknow
ECCN代码EAR99
最大时钟频率 (fCLK)0.4 MHz
数据保留时间-最小值100
耐久性1000000 Write/Erase Cycles
I2C控制字节1010DDMR
JESD-30 代码R-PDIP-T8
JESD-609代码e4
长度9.27 mm
内存密度4096 bi
内存集成电路类型EEPROM
内存宽度8
功能数量1
端子数量8
字数512 words
字数代码512
工作模式SYNCHRONOUS
最高工作温度125 °C
最低工作温度-40 °C
组织512X8
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP8,.3
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源2/5 V
认证状态Not Qualified
座面最大高度5.33 mm
串行总线类型I2C
最大待机电流0.000002 A
最大压摆率0.002 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)1.8 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级AUTOMOTIVE
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度7.62 mm
最长写入周期时间 (tWC)5 ms
写保护HARDWARE

文档预览

下载PDF文档
CAT24C01, CAT24C02,
CAT24C04, CAT24C08,
CAT24C16
1-Kb, 2-Kb, 4-Kb, 8-Kb and
16-Kb I
2
C CMOS Serial
EEPROM
Description
http://onsemi.com
PDIP−8
L SUFFIX
CASE 646AA
MSOP−8
Z SUFFIX
CASE 846AD
TSSOP−8
Y SUFFIX
CASE 948AL
SOIC−8
W SUFFIX
CASE 751BD
TDFN−8*
VP2 SUFFIX
CASE 511AK
UDFN8−EP
HU4 SUFFIX
CASE 517AZ
TSOT−23
TD SUFFIX
CASE 419AE
TSOP−5**
TS SUFFIX
CASE 483
WLCSP−4***
C4A SUFFIX
CASE 567DC
WLCSP−5***
C5A SUFFIX
CASE 567DD
The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and
16−Kb respectively CMOS Serial EEPROM devices organized
internally as 8/16/32/64 and 128 pages respectively of 16 bytes each.
All devices support both the Standard (100 kHz) as well as Fast
(400 kHz) I
2
C protocol.
Data is written by providing a starting address, then loading 1 to 16
contiguous bytes into a Page Write Buffer, and then writing all data to
non−volatile memory in one internal write cycle. Data is read by
providing a starting address and then shifting out data serially while
automatically incrementing the internal address count.
External address pins make it possible to address up to eight
CAT24C01 or CAT24C02, four CAT24C04, two CAT24C08 and one
CAT24C16 device on the same bus.
Features
Supports Standard and Fast I
2
C Protocol
1.7 V to 5.5 V Supply Voltage Range
16−Byte Page Write Buffer
Hardware Write Protection for Entire Memory
Schmitt Triggers and Noise Suppression Filters on I
2
C Bus Inputs
(SCL and SDA)
Low power CMOS Technology
More than 1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial and Extended Temperature Range
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONFIGURATION
CAT24C__
16 / 08 / 04 / 02 / 01
NC / NC / NC / A
0
/ A
0
NC / NC / A
1
/ A
1
/ A
1
NC / A
2
/ A
2
/ A
2
/ A
2
V
SS
PIN CONFIGURATIONS
SCL
V
SS
SDA
1
2
3
4
V
CC
5
WP
TSOT−23 (TD), TSOP−5** (TS) (Top View)
** TSOP are available for the CAT24C02 only.
Pin 1
A
1
V
CC
2
V
SS
Pin 1
1
V
CC
SDA
B
SCL
SDA
WP
SCL
2
3
V
SS
A
B
C
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
WLCSP−4***
(Top Views)
WLCSP−5***
*** WLCSP are available for the CAT24C04,
CAT24C08 and CAT24C16 only.
Pin 1
TOP MARKING FOR WLCSP
(Ball Down)
X
YM
X = Specific Device
X =
Code
4 = 24C04
8 = 24C08
6 = 24C16
Pin 1
PDIP (L), SOIC (W), TSSOP (Y), MSOP (Z),
TDFN, (VP2)*, UDFN−EP (HU4) (Top View)
* The TDFN (VP2) package is not recommended for new designs.
X
YM
WLCSP−5
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 19 of this data sheet.
WLCSP−4
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
©
Semiconductor Components Industries, LLC, 2013
February, 2013
Rev. 26
1
Publication Order Number:
CAT24C01/D

CAT24C04LE-G相似产品对比

CAT24C04LE-G CAT24C02TSI-T3 CAT24C04HU4E-GT3 CAT24C08HU4E-GT3 CAT24C08LE-G CAT24C01_13 CAT24C02LE-GA CAT24C02VP2EGT3A
描述 2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8 2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8 2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8 2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8 2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8 2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8 2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8 2K X 1 I2C/2-WIRE SERIAL EEPROM, PDSO8
内存宽度 8 16 8 8 8 1 8 1
功能数量 1 1 1 1 1 1 1 1
端子数量 8 5 8 8 8 8 8 8
组织 512X8 128X16 512X8 1KX8 1KX8 2K × 1 256X8 2KX1
表面贴装 NO YES YES YES NO Yes NO YES
温度等级 AUTOMOTIVE INDUSTRIAL AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE INDUSTRIAL AUTOMOTIVE AUTOMOTIVE
端子形式 THROUGH-HOLE GULL WING NO LEAD NO LEAD THROUGH-HOLE NO 铅 THROUGH-HOLE NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
是否无铅 不含铅 - 不含铅 不含铅 不含铅 - 不含铅 -
是否Rohs认证 符合 符合 符合 符合 符合 - 符合 符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) - ON Semiconductor(安森美) -
零件包装代码 DIP - SON SON DIP - DIP SON
包装说明 DIP, DIP8,.3 TSSOP, TSOP5/6,.11,37 UDFN-8 HVSON, SOLCC8,.11,20 DIP, DIP8,.3 - DIP-8 HVSON, SOLCC8,.11,20
针数 8 - 8 8 8 - 8 8
Reach Compliance Code unknow compliant compli compli compliant - compli unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99 -
最大时钟频率 (fCLK) 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz - 0.4 MHz 0.4 MHz
数据保留时间-最小值 100 100 100 100 100 - 100 100
耐久性 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles - 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
I2C控制字节 1010DDMR 1010000R 1010DDMR 1010DMMR 1010DMMR - 1010DDDR 1010DDDR
JESD-30 代码 R-PDIP-T8 R-PDSO-G5 R-PDSO-N8 R-PDSO-N8 R-PDIP-T8 - R-PDIP-T8 R-PDSO-N8
JESD-609代码 e4 - e4 e4 e4 - e4 e4
长度 9.27 mm 3 mm 3 mm 3 mm 9.27 mm - 9.27 mm 3 mm
内存密度 4096 bi 2048 bit 4096 bi 8192 bi 8192 bit - 2048 bi 2048 bi
内存集成电路类型 EEPROM EEPROM EEPROM EEPROM EEPROM - EEPROM EEPROM
字数 512 words 128 words 512 words 1024 words 1024 words - 256 words 2048 words
字数代码 512 128 512 1000 1000 - 256 2000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
最高工作温度 125 °C 85 °C 125 °C 125 °C 125 °C - 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C - -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP TSSOP HVSON HVSON DIP - DIP HVSON
封装等效代码 DIP8,.3 TSOP5/6,.11,37 SOLCC8,.11,20 SOLCC8,.11,20 DIP8,.3 - DIP8,.3 SOLCC8,.11,20
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE IN-LINE - IN-LINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行 SERIAL SERIAL SERIAL SERIAL SERIAL - SERIAL SERIAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
电源 2/5 V 1.8/5 V 2/5 V 2/5 V 2/5 V - 2/5 V 2/5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
座面最大高度 5.33 mm 1.1 mm 0.55 mm 0.55 mm 5.33 mm - 5.33 mm 0.8 mm
串行总线类型 I2C I2C I2C I2C I2C - I2C I2C
最大待机电流 0.000002 A 0.000003 A 0.000005 A 0.000005 A 0.000002 A - 0.000005 A 0.000005 A
最大压摆率 0.002 mA 0.002 mA 0.002 mA 0.002 mA 0.002 mA - 0.002 mA 0.002 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V
最小供电电压 (Vsup) 1.8 V 1.7 V 1.8 V 1.8 V 1.8 V - 1.8 V 1.8 V
标称供电电压 (Vsup) 3.3 V 5 V 3.3 V 3.3 V 3.3 V - 3.3 V 3.3 V
技术 CMOS CMOS CMOS CMOS CMOS - CMOS CMOS
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) - Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) - Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子节距 2.54 mm 0.95 mm 0.5 mm 0.5 mm 2.54 mm - 2.54 mm 0.5 mm
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
宽度 7.62 mm 1.5 mm 2 mm 2 mm 7.62 mm - 7.62 mm 2 mm
最长写入周期时间 (tWC) 5 ms 5 ms 5 ms 5 ms 5 ms - 5 ms 5 ms
写保护 HARDWARE HARDWARE HARDWARE HARDWARE HARDWARE - HARDWARE HARDWARE
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