DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BZX84 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 May 18
2003 Apr 10
NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 250 mW
•
Three tolerance series:
±1%, ±2%
and approx.
±5%
•
Working voltage range: nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
•
General regulation functions.
handbook, halfpage
2
BZX84 series
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
DESCRIPTION
Low-power voltage regulator diodes in small SOT23
plastic SMD packages.
The diodes are available in the normalized E24
±1%
(BZX84-A),
±2%
(BZX84-B) and approx.
±5%
(BZX84-C)
tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V.
3
Top view
MAM243
2
n.c.
3
1
Fig.1 Simplified outline (SOT23) and symbol.
2003 Apr 10
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
MARKING
TYPE
NUMBER
MARKING
CODE
(1)
Y50 or
∗50
Y51 or
∗51
Y52 or
∗52
Y53
Y55 or
∗55
Y56 or
∗56
Y57 or
∗57
Y58 or
∗58
Y59 or
∗59
Z50 or
∗Z0
Z51 or
∗Z1
Z52 or
∗S1
Z53 or
∗S2
Z54 or
∗S3
Z55 or
∗S4
Z56 or
∗S7
Z57 or
∗S8
TYPE
NUMBER
MARKING
CODE
(1)
Y60 or
∗60
Y61 or
∗61
Y62 or
∗62
Y63 or
∗63
Y64 or
∗64
Y65 or
∗65
Y66 or
∗04
Y67 or
∗67
Y69 or
∗69
TYPE
NUMBER
MARKING
CODE
(1)
BZX84 series
TYPE
NUMBER
MARKING
CODE
(1)
Y80 or
∗C5
Y81
Y82 or
∗C6
Y83
Y84
Y85
Y86 or
∗86
−
−
−
Z80 or
∗S5
Z81 or
∗S6
Z82 or
∗S9
Z83 or
∗R0
Z84 or
∗R3
Z85 or
∗R4
Z86 or
∗R7
−
−
−
Y15 or
∗B4
Y16 or
∗B5
Y17 or
∗B7
Y18 or
∗B8
Y19 or
∗B9
Y20 or
∗B0
Y21 or
∗A1
−
−
−
Marking codes for BZX84-A2V4 to BZX84-A75
BZX84-A2V4
BZX84-A2V7
BZX84-A3V0
BZX84-A3V3
BZX84-A3V6
BZX84-A3V9
BZX84-A4V3
BZX84-A4V7
BZX84-A5V1
BZX84-A5V6
BZX84-A6V2
BZX84-A6V8
BZX84-A7V5
BZX84-A8V2
BZX84-A10
BZX84-A11
BZX84-A12
BZX84-A13
BZX84-A15
BZX84-A16
BZX84-A18
BZX84-A20
BZX84-A22
BZX84-A24
BZX84-A27
BZX84-A30
BZX84-A33
BZX84-A39
Y70
Y71
Y73
Y74
Y75 or
∗75
Y76
Y77
Y78 or
∗C3
Y79 or
∗C4
Z70 or
∗70
Z71 or
∗71
Z72 or
∗72
Z73 or
∗73
Z74 or
∗74
Z75 or
∗Z5
Z76 or
∗Z4
Z77 or
∗Y1
Z78 or
∗Y2
Z79 or
∗S0
BZX84-A43
BZX84-A47
BZX84-A56
BZX84-A62
BZX84-A68
BZX84-A75
−
−
−
Y72 or
∗C2
BZX84-A51
Y54 or
∗C1
BZX84-A9V1
Y68 or
∗C0
BZX84-A36
Marking codes for BZX84-B2V4 to BZX84-B75
BZX84-B2V4
BZX84-B2V7
BZX84-B3V0
BZX84-B3V3
BZX84-B3V6
BZX84-B3V9
BZX84-B4V3
BZX84-B4V7
BZX84-B5V1
BZX84-B5V6
BZX84-B6V2
BZX84-B6V8
BZX84-B7V5
BZX84-B8V2
BZX84-B9V1
BZX84-B10
BZX84-B11
BZX84-B12
Z60 or
∗R5
BZX84-B16
Z61 or
∗R6
BZX84-B18
Z62 or
∗R8
BZX84-B20
Z63 or
∗R9
BZX84-B22
Z64 or
∗T1
Z65 or
∗66
Z66 or
∗Z6
Z67 or
∗Z7
Z68 or
∗Z8
Z69 or
∗Z9
BZX84-B24
BZX84-B27
BZX84-B30
BZX84-B33
BZX84-B36
BZX84-B39
BZX84-B43
BZX84-B47
BZX84-B51
BZX84-B56
BZX84-B62
BZX84-B68
BZX84-B75
−
−
−
Z58 or
∗R1
BZX84-B13
Z59 or
∗R2
BZX84-B15
Z11 or
∗T3
Z12 or
∗T4
Z13 or
∗T9
Z14 or
∗B1
Z15 or
∗B2
Z16 or
∗B3
Z17 or
∗B6
Z1∗
Z2∗
Z3∗
Marking codes for BZX84-C2V4 to BZX84-C75
BZX84-C2V4
BZX84-C2V7
BZX84-C3V0
BZX84-C3V3
BZX84-C3V6
BZX84-C3V9
BZX84-C4V3
BZX84-C4V7
BZX84-C5V1
BZX84-C5V6
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
BZX84-C6V2
BZX84-C6V8
BZX84-C7V5
BZX84-C8V2
BZX84-C9V1
BZX84-C10
BZX84-C11
BZX84-C12
BZX84-C13
BZX84-C15
Z4∗
Z5∗
Z6∗
Z7∗
Z8∗
Z9∗
Y1∗
Y2∗
Y3∗
Y4∗
BZX84-C16
BZX84-C18
BZX84-C20
BZX84-C22
BZX84-C24
BZX84-C27
BZX84-C30
BZX84-C33
BZX84-C36
BZX84-C39
Y5∗
Y6∗
Y7∗
Y8∗
Y9∗
Y10 or
∗T2
Y11 or
∗T5
Y12 or
∗T6
Y13 or
∗T7
Y14 or
∗T8
BZX84-C43
BZX84-C47
BZX84-C51
BZX84-C56
BZX84-C62
BZX84-C68
BZX84-C75
−
−
−
2003 Apr 10
3
NXP Semiconductors
Product data sheet
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX84-A/B/C2V4
BZX84-A/B/C2V7
BZX84-A/B/C3V0
BZX84-A/B/C3V3
BZX84-A/B/C3V6
BZX84-A/B/C3V9
BZX84-A/B/C4V3
BZX84-A/B/C4V7
BZX84-A/B/C5V1
BZX84-A/B/C5V6
BZX84-A/B/C6V2
BZX84-A/B/C6V8
BZX84-A/B/C7V5
BZX84-A/B/C8V2
BZX84-A/B/C9V1
BZX84-A/B/C10
BZX84-A/B/C11
BZX84-A/B/C12
BZX84-A/B/C13
BZX84-A/B/C15 to 75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
CONDITIONS
I
F
= 10 mA; see Fig.3
0.9
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
CONDITIONS
−
MIN.
BZX84 series
MAX.
200
UNIT
mA
see Tables
1 and 2
−
−
−65
−65
250
40
+150
+150
mW
W
°C
°C
MAX.
V
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
UNIT
2003 Apr 10
4
Table 1
Per type BZX84-A/B/C2V4 to
A/B/C24
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±1%
(A)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
2.37
2.67
2.97
3.26
3.56
3.86
4.25
4.65
5.04
5.54
6.13
6.73
7.42
8.11
9.00
9.90
10.80
11.88
12.87
14.85
15.84
17.82
19.80
21.78
23.76
MAX.
2.43
2.73
3.03
3.34
3.64
3.94
4.35
4.75
5.16
5.66
6.27
6.87
7.58
8.29
9.20
10.10
11.11
12.12
13.13
15.15
16.16
18.18
20.20
22.22
24.24
Tol.
±2%
(B)
MIN.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
Tol. approx.
±5%
(C)
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at
I
Ztest
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
MAX.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
at
I
Ztest
= 5 mA
TYP. MAX.
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
20
25
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
TYP. MAX.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 4 and 5)
DIODE CAP. NON-REPETITIVE
C
d
(pF)
PEAK REVERSE
CURRENT
at f = 1 MHz;
V
R
= 0 V
I
ZSM
(A)
at t
p
= 100
μs;
T
amb
= 25
°C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
MAX.
2003 Apr 10
5
NXP Semiconductors
Voltage regulator diodes
BZX84-
Axxx
Bxxx
Cxxx
BZX84 series
2.0
1.5
1.5
1.5
1.25
1.25
Product data sheet
嵌入式系统
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