BZX55C SERIES
ZENER DIODE
REVERSE VOLTAGE
- 2.4
to
188
Volts
DO - 35
.020
TYP.
(0.51)
1.083(27.5)
MIN
FEATURES
●
High reliability
APPLICATIONS
●
Voltage stabilization
CONSTRUCTION
●
Silicon epitaxial planar
.150(3.8)
MAX
.079
MAX
(2.0)
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
T
J
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
T
stg
Test Conditions
I=4mm T
L
≤25℃
Type
Symbol
Pv
Iz
Value
500
Unit
Mw
M
A
Pv/Vz
175℃
℃
℃
-55 ~ +200
MAXIMUM THERMAL RESISTANCE
T
J
=25℃
Parameter
Junction ambient
Test Conditions
I=4mm T
L
=constant
Symbol
Rth
JA
Value
350
Unit
K/W
ELECTRICAL CHARACTERISTICS
T
J
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
~ 399 ~
RATING AND CHARACTERISTIC CURVES
BZX55C SERIES
FIG. 2 - TOTAL POWER DISSIPATIONVS.
AMBIENT TEMPERATURE
600
500
TOTAL POWER DISSIPATION(mw)
0
5
10
15
20
LEAD LENGTH (mm)
500
FIG. 1 - THERMAL RESISTANCE VS.LEAD LENGTH
THERM.RESIST.JUNCTION / AMBIENT(K/M)
400
400
300
300
200
200
100
0
100
0
0
40
80
120
160
200
AMBIENT TEMPERATURE (°C)
FIG.3 -TYPICAL CHANGE OF WORKING VOLTAGE
UNDER OPERATING CONDITIONS AT Tamb=25°C
1000
VOLTAGE CHAGNE(mA)
T
J
=25°C
RELATIVE VOLTAGE CHANGE
FIG. 4 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
1.3
V
Z
tn=Vzt/Vz(25°C)
1.2
TKyz=10x10
-4/
K
1.1
6x10
-4/
K
8x10
-4/
K
4x10
-4/
K
2x10
-4/
K
0
-2x10
-4/
K
-4x10
-4/
K
100
Iz=5mA
1.0
10
0.9
1
0
5
15
10
Z-VOLTAGE (V)
20
25
0.8
-60
0
60
120
180
240
JUNCTION TEMPERATURE (°C)
TEMPERATURE COEFFICIENT OF Vz (10
-4
/K)
FIG.5 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
15
DIODE CAPACITANCE (PF)
200
FIG.6 - DIODE CAPACITANCE VS.Z-VOLTAGE
10
150
V
R
=2V
T
J
=25°C
5
100
Iz=5mA
0
50
0
0
-5
0
10
20
30
40
50
0
5
10
15
20
25
Z-VOLTAGE(V)
Z-VOLTAGE(V)
~ 400 ~
RATING AND CHARACTERISTIC CURVES
BZX55C SERIES
FIG.7 - FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD CURRENT (mA)
100
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
0
0
4
8
12
16
20
Z-VOLTAGE(V)
FORWARD VOLTAGE (V)
T
J
=25°C
Z-CURRENT (mA)
100
80
60
40
20
FIG.8 - Z-CURRENT VS. Z-VOLTAGE
Ptot=500mW
Tamb=25°C
FIG.9 - Z-CURRENT VS. Z-VOLTAGE
（
Ω
）
50
40
Z-CURRENT (mA)
30
20
Ptot=500mW
Tamb=25°C
1000
FIG.10 - DIFFERENTIAL Z-RESISTANCE
Vz VS. Z-VOLTAGE
DIFFERENTIAL-RESISTANCE
Iz=1mA
100
5mA
10
10
0
15
10m
1
0
5
10
15
T
J
=25°C
20
25
20
25
30
35
Z-VOLTAGE(V)
Z-VOLTAGE(V)
FIG.11 - THERMAL RESPONSE
THERMAL RESISTANCE FOR PULSE COND. (K/W)
1000
100
10
1
10
-1
10
0
10
1
PULSE LENGTH (ms)
10
2
~ 401 ~
BZX55C SERIES
500mW ZENER DIODES/DO-35/DL-35(MINI MELF)
Nominal
Zener
Test
Current
OPRERATING AND STORAGE TEMPERATURE -55℃to+200℃
Maximum Zener
Impedance
TYPE
I
ZT
mA
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
I
ZK
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Maximum Reverse
Leakage Current
Maximun
Surge
Current
Maximum
Regulation
Current
Min
BZX55C2V4
2.28
BZX5C2V7
2.50
BZX55C3V0
2.80
BZX55C3V3
3.10
BZX55C3V6
3.40
BZX55C3V9
3.70
BZX55C4V3
4.00
BZX55C4V7
4.40
BZX55C5V1
4.80
BZX55C5V6
5.20
BZX55C6V2
5.80
BZX55C6V8
6.40
BZX55C7V5
7.00
BZX55C8V2
7.70
BZX55C9V1
8.50
BZX55C10
9.40
BZX55C11
10.4
BZX55C12
11.4
BZX55C13
12.4
BZX55C15
13.8
BZX55C16
15.3
BZX55C18
16.8
BZX55C20
18.8
BZX55C22
20.8
BZX55C24
22.8
BZX55C27
25.1
BZX55C30
28.0
BZX55C33
31.0
BZX55C36
34.0
BZX55C39
37.0
BZX55C43
40.0
BZX55C47
44.0
BZX55C51
48.0
BZX55C56
52.0
BZX55C62
58.0
BZX55C68
64.0
BZX55C75
70.0
BZX55C82
77.0
BZX55C91
85.0
BZX55C100
94.0
BZX55C110
104
BZX55C120
114
BZX55C130
124
BZX55C150
138
BZX55C160
153
BZX55C180
168
BZX55C188
188
NOTE: 1. Normal Tolerance
±5%.
Max
2.56
2.90
3.20
3.50
3.80
4.10
4.60
5.00
5.40
6.00
6.60
7.20
7.90
8.70
9.60
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
87.0
96.0
106
116
127
141
156
171
191
212
Z
ZT
@
I
ZT
Ohms
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
300
450
450
600
800
1000
1200
1500
1800
2000
Z
ZT
@
I
ZK
Ohms
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1500
2000
5000
5000
5000
5000
5000
5000
5000
5000
5000
I
R
μA
50
10
4.0
2.0
2.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
@
V
R
I
ZM
mA
﹣0.085
﹣0.080
﹣0.075
﹣0.070
﹣0.065
﹣0.060
±0.055
±0.030
±0.030
﹢0.038
﹢0.045
﹢0.050
﹢0.058
﹢0.062
﹢0.068
﹢0.075
﹢0.076
﹢0.077
﹢0.079
﹢0.082
﹢0.083
﹢0.085
﹢0.086
﹢0.087
﹢0.088
﹢0.090
﹢0.091
﹢0.092
﹢0.093
﹢0.094
﹢0.095
﹢0.095
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
﹢0.096
mA
155
135
125
115
105
95
90
85
80
70
64
58
53
74
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.3
4.8
4.4
4.0
3.6
3.3
3.0
2.6
2.5
2.2
2.0
Volts
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
~ 402 ~
NXP MCU
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