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BZW04P11

产品描述400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
产品类别分立半导体    二极管   
文件大小392KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

BZW04P11概述

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL

BZW04P11规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Vishay(威世)
Reach Compliance Codeunknown
击穿电压标称值13 V
最大钳位电压18.2 V
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码e0
极性UNIDIRECTIONAL
最大重复峰值反向电压11 V
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
Base Number Matches1

文档预览

下载PDF文档
BZW04P-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
TransZorb
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-204AL (DO-41)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
5.8 V to 376 V
400 W
1.5 W
40 A
175 °C
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial and telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
BZW04-213(B) ~ BZW04-376(B) for commercial grade only
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
BZW04P-6V4B).
types,
use
B
suffix
(e.g.
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(T
A
= 25 °C unles otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs
waveform
(1)
(fig. 1)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
400
See next
table
1.5
40
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 25 A for uni-directional only
(3)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)
V = 3.5 V for BZW04P(-)188 and below; V = 5.0 V for BZW04P(-)213 and above
F
F
Revision: 12-Jul-11
Document Number: 88316
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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