BYW178
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Very fast reverse recovery time
• Low reverse recovery peak current
949588
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
APPLICATIONS
• Ultra fast rectification diode for switching mode power
supplies
PARTS TABLE
PART
BYW178
TYPE DIFFERENTIATION
V
R
= 800 V; I
FAV
= 3 A
PACKAGE
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature range
Non repetitive reverse
I
(BR)R
= 0.4 A
TEST CONDITION
See electrical characteristics
t
p
= 10 ms, half sine wave
PART
BYW178
SYMBOL
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
T
j
= T
stg
E
R
VALUE
800
80
15
3
- 55 to + 175
20
UNIT
V
A
A
A
°C
mJ
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction lead
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 37.5 mm
SYMBOL
R
thJL
R
thJA
VALUE
25
70
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery current
Reverse recovery time
Reverse recovery time (JEDEC)
TEST CONDITION
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
F
= 1 A, dI
F
/dt
≤
- 50 A/μs, V
Batt
= 200 V
I
F
= 1 A, dI
F
/dt
≤
- 50 A/μs,
V
Batt
= 200 V, i
R
= 0.25 x l
RM
I
F
= 0.5 A, l
R
= 1 A, i
R
= 0.25 A
SYMBOL
V
F
I
R
I
R
l
RM
t
rr
t
rr
MIN.
-
-
-
-
-
-
TYP.
-
-
-
2.2
50
-
MAX.
1.9
1
20
-
-
60
UNIT
V
μA
μA
A
ns
ns
Document Number: 86047
Rev. 1.7, 04-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BYW178
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass
Diode
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
R
thJA
- Therm.Resist. Junction/Ambient (K/W)
40
3.5
I
FAV
–Average Forward Current( A )
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
R
thJA
≤
70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sinewave
R
thJA
≤
25 K/W
l = 10mm
30
20
l
l
10
T
L
= constant
0
0
5
10
15
20
25
30
94 9570
I - Lead Length (mm)
16459
60 80 100 120 140 160 180
T
amb
– Ambient Temperature (°C )
40
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
I
RM
– Reverse Recovery Current (A )
5
dI
F
/dt = 50A/μs
4
I
R
– Reverse Current (A )
1000
V
R
= V
RRM
100
3
2
1
0
0.1
1
I
F
– Forward Current ( A )
10
10
1
25
16460
94 9571
50
75
100 125 150 175
T
j
– Junction Temperature ( °C )
Fig. 2 - Typ. Reverse Recovery Current vs. Forward Current
Fig. 5 - Reverse Current vs. Junction Temperature
P – Reverse Power Dissipation ( mW)
R
100.000
– Forward Current (A)
400
350
300
250
200
150
100
50
0
25
50
75
100 125 150 175
T
j
– Junction Temperature (°C )
P
R
–Limit
@100 % V
R
V
R
= V
RRM
10.000
1.000
T
j
= 175°C
T
j
= 25 °C
0.100
0.010
P
R
–Limit
@ 80 % V
R
I
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16458
V
F
– Forward Voltage ( V )
F
16461
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Max Reverse Power Dissipation vs. Junction Temperature
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86047
Rev. 1.7, 04-Aug-10
BYW178
Ultra Fast Avalanche Sinterglass
Diode
Vishay Semiconductors
90
C
D
– Diode Capacitance ( pF )
80
70
60
50
40
30
20
10
0
0.1
f = 1 MHz
16462
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Fig. 7 - Diode Capacitance vs. Reverse Voltage
Z
thp
- Thermal Resist. for Pulse Cond. (K/W)
1000
V
RRM
= 600 V
R
thJA
= 70 K/W
100
t
p
/T = 0.5
0.2
10
0.1
0.05
0.02
0.01
1
10
-4
949562
T
amb
= 25 °C
100 °C
45 °C
70 °C
10
-3
10
-2
10
-1
10
-0
10
1
10
2
10
0
10
1
10
2
t
p
- Pulse Length (s)
I
FRM
- Repetitive Peak
Forward Current (A)
Fig. 8 - Thermal Response
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Document Number: 86047
Rev. 1.7, 04-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
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