BYV32, BYVF32 & BYVB32 Series
Vishay Semiconductors
formerly General Semiconductor
Dual Ultrafast Rectifiers
Reverse Voltage
50 to 200V
Forward Current
18A
Reverse Recovery Time
25ns
ITO-220AB (BYVF32 Series)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
1
0.160 (4.06)
0.140 (3.56)
PIN
2
3
0.603 (15.32)
0.573 (14.55)
1
TO-220AB (BYV32 Series)
0.415 (10.54) MAX.
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
PIN
2
3
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
PIN 3
PIN 2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 3
PIN 2
CASE
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-263AB (BYVB32 Series)
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.33
(8.38)
Mounting Pad Layout TO-263AB
0.42
(10.66)
Dimensions in inches
and (millimeters)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.055 (1.40)
0.047 (1.19)
0.63
(17.02)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.08
(2.032)
0.24
(6.096)
0.027 (0.686)
0.12
(3.05)
PIN 1
PIN 2
K - HEATSINK
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Dual rectifier construction, positive centertap
• Glass passivated chip junctions
• Low power loss
• Low forward voltage, high current capability
• High surge current capability
• Superfast recovery times for high efficiency
Mechanical Data
Case:
JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C, 0.16" (4.06mm) from case for 10 seconds
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
www.vishay.com
1
Document Number 88558
26-Mar-03
BYV32, BYVF32 & BYVB32 Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
ISOL
BYV32-50 BYV32-100 BYV32-150 BYV32-200
50
35
50
100
70
100
18
150
–65 to +150
4500
3500
1500
(1)
(2)
(3)
Unit
V
V
V
A
A
°C
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 125°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
Operating junction and storage temperature range
RMS Isolation voltage (BYVF type only) from terminals to
heatsink with t = 1.0 second, RH
≤
30%
150
105
150
200
140
200
Electrical Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
V
F
BYV32-50 BYV32-100 BYV32-150 BYV32-200
1.15
0.85
10
600
25
45
Unit
V
µA
ns
pF
Maximum instantaneous forward voltage per leg at:
(4)
at I
F
= 20A
at I
F
= 5.0A, T
J
= 100°C
Maximum DC reverse current per leg
at rated DC blocking voltage
T
J
= 25°C
T
J
= 100°C
I
R
t
rr
C
J
Maximum reverse recovery time per leg at
I
F
= 1A, V
R
= 30V, di/dt = 100A/µs, I
rr
= 10% I
RM
Typical junction capacitance per leg at 4V, 1MHz
Thermal Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
R
ΘJC
BYV
1.6
BYVF
5.0
BYVB
1.6
Unit
°C/W
Thermal resistance from junction to case per leg
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88558
26-Mar-03
BYV32, BYVF32 & BYVB32 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Forward Current Derating Curve
20
150
Resistive or Inductive Load
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Peak Forward Surge Current (A)
T
J
= 150°C
10ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
18
16
125
100
75
50
25
12
8.0
4.0
0
0
0
25
50
75
100
125
150
1
10
100
Case Ambient Temperature (°C)
Number of Cycles at 50 H
Z
Typical Instantaneous
Forward Characteristics Per Leg
I
F
– Instantaneous Forward Current (A)
100
1000
Typical Reverse Leakage
Characteristics Per Leg
10
T
J
= 125°C
I
R
– Instantaneous Reverse
Leakage Current (mA)
100
T
C
= 100°C
1
T
J
= 25°C
10
0.1
Pulse Width = 300µs
1% Duty Cycle
0.01
0.1
1
T
C
= 25°C
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Typical Junction Capacitance Per Leg
60
T
J
= 25°C
f = 1.0 MH
Z
V
sig
= 5mVp-p
pF – Junction Capacitance
50
40
30
20
10
0
1
10
100
Reverse Voltage (V)
Document Number 88558
26-Mar-03
www.vishay.com
3
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