BYV98-50, BYV98-100, BYV98-150, BYV98-200
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
FEATURES
• High reverse voltage
• Glass passivated
• Low reverse current
• Low forward voltage drop
• Hermetically sealed axial-leaded glass envelope
949588
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
PARTS TABLE
PART
BYV98-50
BYV98-100
BYV98-150
BYV98-200
TYPE DIFFERENTIATION
V
R
= 50 V; I
FAV
= 4 A
V
R
= 100 V; I
FAV
= 4 A
V
R
= 150 V; I
FAV
= 4 A
V
R
= 200 V; I
FAV
= 4 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
Average forward current
Junction and storage temperature
range
Non repetitive reverse avalanche
energy
l
(BR)R
= 1 A
TEST CONDITION
PART
BYV98-50
See electrical characteristics
BYV98-100
BYV98-150
BYV98-200
t
p
= 10 ms, half sine wave
T
amb
= 30 °C, l = 10 mm
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
T
j
= T
stg
E
R
VALUE
50
100
150
200
70
4
- 55 to + 175
20
UNIT
V
V
V
V
A
A
°C
mJ
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
SYMBOL
R
thJA
VALUE
25
UNIT
K/W
Document Number: 86046
Rev. 1.7, 04-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BYV98-50, BYV98-100, BYV98-150, BYV98-200
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass
Diode
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
TEST CONDITION
I
F
= 5 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
BYV98-50
Reverse breakdown voltage
I
R
= 100 μA
BYV98-100
BYV98-150
BYV98-200
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBOL
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
MIN.
-
-
-
60
120
170
220
-
TYP.
-
-
-
-
-
-
-
-
MAX.
1.1
10
200
-
-
-
-
35
UNIT
V
μA
μA
V
V
V
V
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
120
180
P – Reverse Power Dissipation ( mW)
R
C
D
– Diode Capacitance ( pF )
V
R
= V
RRM
100
80
60
40
BYV98–50
20
0
25
50
75
100 125 150 175
T
j
– Junction Temperature ( °C )
R
thJA
=
25 K/W
70 K/W
150 K/W
BYV98–150
BYV98–100
BYV98–200
160
140
120
100
80
60
40
20
0
0.1
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
15784
17194
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 3 - Diode Capacitance vs. Reverse Voltage
1000
V
R
= V
RRM
I
R
– Reverse Current (A)
I
FAV
–Average Forward Current( A )
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
15783
V
R
= V
RRM
half sinewave
R
thJA
= 25 K/W
l = 10 mm
100
10
R
thJA
= 70 K/W
PCB: d = 25 mm
20
60 80 100 120 140 160 180
T
amb
– Ambient Temperature ( °C )
40
1
25
15785
50
75
100 125 150 175
T
j
– Junction Temperature ( °C )
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86046
Rev. 1.7, 04-Aug-10
BYV98-50, BYV98-100, BYV98-150, BYV98-200
Ultra Fast Avalanche Sinterglass
Diode
Vishay Semiconductors
100.00
T
j
= 175°C
I
F
– Forward Current (A)
10.00
T
j
= 25 °C
1.00
0.10
0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
F
– Forward Voltage ( V )
15782
Fig. 5 - Max. Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Document Number: 86046
Rev. 1.7, 04-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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