BYV37, BYV38
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Fast “soft recovery” rectification diode
PARTS TABLE
PART
BYV37
BYV38
TYPE DIFFERENTIATION
V
R
= 800 V; I
FAV
= 2 A
V
R
= 1000 V; I
FAV
= 2 A
PACKAGE
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche
energy
Junction and storage temperature
range
I
(BR)R
= 0.4 A
TEST CONDITION
See electrical characteristics
t
p
= 10 ms, half sine wave
PART
BYV37
BYV38
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
E
R
T
j
= T
stg
VALUE
800
1000
50
2
10
- 55 to + 175
UNIT
V
V
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Diode capacitance
TEST CONDITION
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
V
R
= 4 V, f = 1 MHz
PART
SYMBOL
V
F
I
R
I
R
t
rr
C
D
MIN.
-
-
-
-
-
TYP.
1
-
-
-
15
MAX.
1.1
5
150
300
-
UNIT
V
μA
μA
ns
pF
www.vishay.com
128
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86045
Rev. 1.7, 31-Mar-10
BYV37, BYV38
Fast Avalanche Sinterglass Diode
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
Vishay Semiconductors
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
100
80
60
l
40
20
T
L
= constant
0
0
949552
10
I
F
- Forward Current (A)
1
T
j
= 175 °C
T
j
= 25 °C
0.1
l
0.01
0.001
30
16343
5
10
15
20
25
0
0.4
0.8
1.2
1.6
2.0
l - Lead Length (mm)
V
F
- Forward Voltage (V)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 4 - Forward Current vs. Forward Voltage
P
R
- Reverse Power Dissipation (mW)
500
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
160 K/W
BYV38
BYV37
R
thJA
= 45 K/W
100 K/W
V
R
= V
RRM
2.5
I
FAV
- Average Forward Current (A)
V
R
= V
RRM
half
sinewave
2.0
R
thJA
≤ 45 K/W
I = 10 mm
1.5
1.0
R
thJA
≤ 100 K/W
PCB: d = 25 mm
0.5
0
0
16344
20
40
60
80 100 120 140 160 180
15774
T
j
- Junction Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 2 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Max. Average Forward Current vs. Ambient Temperature
1000
V
R
= V
RRM
35
f = 1 MHz
C
D
- Diode Capacitance (pF)
30
25
20
15
10
5
0
0.1
I
R
- Reverse Current (A)
100
10
1
25
15775
50
75
100
125
150
175
15776
1
10
100
T
j
- Junction Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 3 - Max. Reverse Current vs. Junction Temperature
Fig. 6 - Typ. Diode Capacitance vs. Reverse Voltage
Document Number: 86045
Rev. 1.7, 31-Mar-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
129
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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