BYV29B-600
Rectifier diode ultrafast
Rev. 01 — 11 August 2003
M3D166
Product data
1. Product profile
1.1 Description
Ultra-fast, epitaxial rectifier diode in a surface mount plastic package.
Product availability:
BYV29B-600 in SOT404 (D
2
-PAK).
1.2 Features
s
Low forward voltage
s
Soft recovery characteristic
s
Fast switching
s
High thermal cycling performance.
1.3 Applications
s
Switched-mode power supplies
s
Low loss rectification.
1.4 Quick reference data
s
V
R
≤
600 V
s
I
F(AV)
≤
9 A
s
V
F
≤
1.03 V
s
t
rr
≤
60 ns
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT404 (D
2
-PAK), simplified outline and symbol
Description
no connection
cathode (k)
anode (a)
mounting base;
connected to cathode (k)
2
1
3
MBK116
Simplified outline
Symbol
k
a
001aaa020
[1]
mb
SOT404 (D
2
-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors
BYV29B-600
Rectifier diode ultrafast
3. Ordering information
Table 2:
Ordering information
Package
Name
BYV29B-600
D
2
-PAK
Description
Version
Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Type number
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
RRM
V
RWM
V
R
I
F(AV)
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward current
square wave;
δ
= 0.5; T
mb
≤
120
°C
square wave; t = 25
µs; δ
= 0.5;
T
mb
≤
120
°C
sinusoidal; with reapplied V
RRM(max)
t
p
= 10 ms
t
p
= 8.3 ms
T
stg
T
j
[1]
[1]
Conditions
Min
-
-
-
-
-
Max
600
600
600
9
18
Unit
V
V
V
A
A
I
FRM
I
FSM
-
-
−40
-
70
77
+150
+150
A
A
°C
°C
storage temperature
junction temperature
Neglecting switching and reverse current losses.
9397 750 11884
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 11 August 2003
2 of 12
Philips Semiconductors
BYV29B-600
Rectifier diode ultrafast
20
PF
(W)
15
δ
= 0.5
δ
=1
003aaa446
100
Tmb(max)
(°C)
112.5
20
PF
(W)
16
2.2
12
2.8
4
8
003aaa447
a = 1.57
1.9
100
Tmb(max)
(°C)
110
120
10
δ
= 0.2
δ
= 0.1
P
δ
=
tp
T
125
130
5
tp
T
0
0
4
8
12
t
137.5
4
140
150
16
IF(AV) (A)
0
0
4
8
IF(AV) (A)
12
150
Square current waveform
Sinusoidal current waveform
I
F
(
AV
)
=
I
F
(
RMS
)
× δ
Fig 1. Maximum forward power dissipation (square
current waveform) as a function of average
forward current.
I
F
(
RMS
a
=
------------------
)
-
I
F
(
AV
)
Fig 2. Maximum forward power dissipation
(sinusoidal current waveform) as a function of
average forward current.
9397 750 11884
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 11 August 2003
3 of 12
Philips Semiconductors
BYV29B-600
Rectifier diode ultrafast
5. Thermal characteristics
Table 4:
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Conditions
in free air
Min Typ Max Unit
-
-
-
50
2.5
-
K/W
K/W
thermal resistance from junction to mounting base
Figure 3
thermal resistance from junction to ambient
Symbol Parameter
5.1 Transient thermal impedance
10
Zth(j-mb)
(K/W)
1
003aaa453
10-
1
10-
2
P
tp
10-
3
10-
6
10-
5
10-
4
10-
3
10-
2
10-
1
1
tp (s)
t
10
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11884
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 11 August 2003
4 of 12
Philips Semiconductors
BYV29B-600
Rectifier diode ultrafast
6. Characteristics
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 8 A
T
j
= 150
°C;
Figure 4
T
j
= 25
°C;
Figure 4
I
F
= 20 A
-
-
-
-
-
-
-
-
-
-
0.9
1.05
1.3
0.1
2
7
40
50
3
3.2
1.03
1.25
1.45
0.35
50
-
70
60
5.5
-
V
V
V
mA
µA
pF
nC
ns
A
V
Min
Typ
Max
Unit
Static characteristics
I
R
reverse current
V
R
= V
RRM
T
j
= 100
°C
T
j
= 25
°C
Dynamic characteristics
C
d
Q
rr
t
rr
I
rrm
V
fr
diode capacitance
reverse recovery charge
reverse recovery time
peak reverse recovery current
forward recovery voltage
f = 1 MHz; V
R
= 100 V;
Figure 8
I
F
= 2 A; V
R
≥
30 V; dI
F
/dt = 20 A/µs;
Figure 7
I
F
= 1 A; V
R
≥
30 V; dI
F
/dt = 100 A/µs;
Figure 5
I
F
= 10 A; V
R
≥
30 V; dI
F
/dt = 50 A/µs
T
j
= 100
°C;
Figure 6
I
F
= 10 A; dI
F
/dt = 10 A/µs
9397 750 11884
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 11 August 2003
5 of 12
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