BYV27/...
Vishay Telefunken
Ultra Fast Silicon Mesa Rectifiers
Features
D
D
D
D
D
Controlled avalanche characteristic
Low forward voltage
Ultra fast recovery time
Glass passivated junction
Hermetically sealed package
Applications
Very fast rectifier e.g. for switch mode power supply
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Peak reverse voltage,
g
non repetitive
Test Conditions
Type
BYV27/50
BYV27/100
BYV27/150
BYV27/200
BYV27/50
BYV27/100
BYV27/150
BYV27/200
Symbol
V
RSM
V
RSM
V
RSM
V
RSM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FRM
I
FAV
E
R
T
j
=T
stg
Value
55
110
165
220
50
100
150
200
50
15
2
20
Unit
V
V
V
V
V
V
V
V
A
A
A
mJ
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
t
p
=10ms,
half sinewave
Repetitive peak forward current
Average forward current
Pulse energy in avalanche mode, I
(BR)R
=0.6A, T
j
=175
°
C
non repetitive
(inductive load switch off)
Junction and storage
temperature range
–65...+175
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86042
Rev. 2, 24-Jun-98
www.vishay.de
•
FaxBack +1-408-970-5600
1 (4)
BYV27/...
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Test Conditions
I
F
=3A
I
F
=3A, T
j
=175
°
C
V
R
=V
RRM
V
RSM
V
R
=V
RRM
, T
j
=165
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
I
R
I
R
I
R
t
rr
Min
Typ
Max
1.07
0.88
1
100
150
25
Unit
V
V
m
A
m
A
m
A
ns
Reverse recovery time
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
I
FAV
– Average Forward Current ( A )
l
100
80
60
40
20
0
0
5
10
15
20
25
30
94 9525
l
2.0
1.6
1.2
0.8
0.4
0
0
40
80
120
160
200
V
R
=V
R RM
f 200kHz
l=20mm
T
L
=constant
v
94 9526
l – Lead Length ( mm )
T
amb
– Ambient Temperature (
°C
)
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
I
FAV
– Average Forward Current ( A )
2.0
1.6
1.2
0.8
0.4
0
0
40
80
I
R
– Reverse Current (
m
A )
V
R RM
f 200kHz
R
thJA
=100K/W
PC Board
v
100
Scattering Limit
10
1
V
R
= V
R RM
0
40
80
120
160
200
0.1
120
160
200
94 9527
94 9524
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.de
•
FaxBack +1-408-970-5600
2 (4)
Document Number 86042
Rev. 2, 24-Jun-98
BYV27/...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
•
FaxBack +1-408-970-5600
4 (4)
Document Number 86042
Rev. 2, 24-Jun-98
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
