BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
PARTS TABLE
PART
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
TYPE DIFFERENTIATION
V
R
= 200 V; I
FAV
= 1 A
V
R
= 400 V; I
FAV
= 1 A
V
R
= 600 V; I
FAV
= 1 A
V
R
= 800 V; I
FAV
= 1 A
V
R
= 1000 V; I
FAV
= 1 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYV26A
BYV26B
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYV26C
BYV26D
BYV26E
Peak forward surge current
Average forward current
Non repetitive reverse avalanche
energy
Junction and storage temperature
range
I
(BR)R
= 1 A, inductive load
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
E
R
T
j
= T
stg
VALUE
200
400
600
800
1000
30
1
10
- 55 to + 175
UNIT
V
V
V
V
V
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
l = 10 mm, T
L
= constant
SYMBOL
R
thJA
VALUE
45
UNIT
K/W
Document Number: 86040
Rev. 1.7, 04-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass
Diode
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
TEST CONDITION
I
F
= 1 A
I
F
= 1 A, T
j
= 175 °C
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
BYV26A
BYV26B
Reverse breakdown voltage
I
R
= 100 μA
BYV26C
BYV26D
BYV26E
BYV26A
BYV26B
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BYV26C
BYV26D
BYV26E
PART
SYMBOL
V
F
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
t
rr
t
rr
t
rr
t
rr
MIN.
-
-
-
-
300
500
700
900
1100
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
2.5
1.3
5
100
-
-
-
-
-
30
30
30
75
75
UNIT
V
V
μA
μA
V
V
V
V
V
ns
ns
ns
ns
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
P
R
- Max. Reverse Power Dissipation (mW)
600
V
R
= V
RRM
500
400
300
600 V
200
100
1000 V
0
0
40
80
120
160
200
959730
1.2
R
thJA
= 45 K/W
R
thJA
= 100 K/W
200 V
400 V
I
FAV
- Average Forward Current (A)
1.0
R
thJA
= 45 K/W
0.8
0.6
0.4
R
thJA
= 100 K/W
0.2
0
0
40
80
120
160
200
800 V
959728
T
j
- Junction Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
V
R
= V
RRM
10
T
j
= 175 °C
I
R
- Reverse Current (μA)
I
F
- Forward Current (A)
100
1
T
j
= 25 °C
0.1
10
1
0.01
0.1
0
959729
0.001
40
80
120
160
200
959731
0
1
2
3
4
5
6
7
T
j
- Junction Temperature (°C)
V
F
- Forward Voltage (V)
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86040
Rev. 1.7, 04-Aug-10
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
Ultra Fast Avalanche Sinterglass
Diode
Vishay Semiconductors
40
f = 1 MHz
40
f = 1 MHz
C
D
- DiodeCapacitance (pF)
C
D
- Diode Capacitance (pF)
35
30
BYV26C
25
20
15
10
5
0
0.1
1
10
100
35
30
BYV26E
25
20
15
10
5
0
0.1
1
10
100
16380
V
R
- Reverse Voltage (V)
16381
V
R
- Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Document Number: 86040
Rev. 1.7, 04-Aug-10
3.6 (0.142) max.
20543
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
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