BYV25X-600
Rectifier diode, ultrafast
Rev. 01 — 12 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultrafast epitaxial rectifier diode in a SOD113 (TO-220F) plastic package.
1.2 Features
I
Fast switching
I
Soft recovery characteristic
I
Low forward voltage drop
I
Low thermal resistance
I
Isolated package
1.3 Applications
I
High frequency switched-mode power
supplies
I
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
1.4 Quick reference data
I
V
RRM
≤
600 V
I
V
F
≤
1.11 V
I
I
F(AV)
≤
5 A
I
t
rr
≤
60 ns
2. Pinning information
Table 1.
Pin
1
2
mb
Pinning
Description
cathode (k)
anode (a)
mounting base; isolated
mb
k
a
001aaa020
Simplified outline
Graphic symbol
1
2
SOD113 (2-lead TO-220F)
NXP Semiconductors
BYV25X-600
Rectifier diode, ultrafast
3. Ordering information
Table 2.
Ordering information
Package
Name
BYV25X-600
TO-220F
Description
Version
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOD113
2-lead TO-220 ‘full pack’
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
square waveform;
δ
= 1.0; T
h
≤
100
°C
square waveform;
δ
= 0.5; T
h
≤
115
°C
square waveform;
δ
= 0.5; T
h
≤
115
°C
t = 10 ms; sinusoidal waveform
t = 8.3 ms; sinusoidal waveform
Conditions
Min
-
-
-
-
-
-
-
−40
-
Max
600
600
600
5
10
60
66
+150
150
Unit
V
V
V
A
A
A
A
°C
°C
BYV25X-600_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 August 2008
2 of 9
NXP Semiconductors
BYV25X-600
Rectifier diode, ultrafast
5. Thermal characteristics
Table 4.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
60
Max
5.5
5.9
-
Unit
K/W
K/W
K/W
thermal resistance from junction to heatsink with heatsink compound;
see
Figure 1
without heatsink compound
R
th(j-a)
thermal resistance from junction to ambient in free air
10
Z
th(j-h)
(K/W)
1
001aaf257
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 1.
Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity
≤
65 %; clean and dust free
from cathode to external heatsink; f = 1 MHz
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYV25X-600_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 August 2008
3 of 9
NXP Semiconductors
BYV25X-600
Rectifier diode, ultrafast
7. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
Conditions
I
F
= 5 A; T
j
= 150
°C;
see
Figure 2
I
F
= 5 A
V
R
= 600 V
V
R
= 600 V; T
j
= 100
°C
Dynamic characteristics
Q
r
t
rr
I
RM
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
I
F
= 2 A to V
R
≥
30 V; dI
F
/dt = 20 A/µs;
see
Figure 3
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs; see
Figure 3
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100
°C;
see
Figure 3
I
F
= 10 A; dI
F
/dt = 10 A/µs;
see
Figure 4
-
-
-
40
50
3
70
60
5.5
nC
ns
A
Min
-
-
-
-
Typ
0.97
1.12
2
0.1
Max
1.11
1.30
50
0.35
Unit
V
V
µA
mA
Static characteristics
V
FR
-
3.2
-
V
15
I
F
(A)
003aac232
10
(1)
(2)
(3)
5
0
0
0.4
0.8
1.2
V
F
(V)
1.6
(1) T
j
= 150
°C;
typical values
(2) T
j
= 150
°C;
maximum values
(3) T
j
= 25
°C;
maximum values
Fig 2.
Forward current as a function of forward voltage
BYV25X-600_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 August 2008
4 of 9
NXP Semiconductors
BYV25X-600
Rectifier diode, ultrafast
I
F
I
F
dl
F
dt
t
rr
time
time
10 %
Q
r
100 %
V
F
I
R
I
RM
001aab911
V
F
V
FR
time
001aab912
Fig 3.
Reverse recovery definitions
Fig 4.
Forward recovery definitions
10
(W)
8
003aac347
8
P
tot
(W)
003aac348
δ
=1
6
6
0.2
4
0.1
0.5
a = 1.57
1.9
2.2
2.8
4.0
4
2
2
0
0
2
4
6
()
0
8
()
0
2
4
I
F(AV)
(A)
6
I
F(AV)
= I
F(RMS)
× √δ
a = form factor = I
F(RMS)
/ I
F(AV)
Fig 5.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV25X-600_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 August 2008
5 of 9
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