BYV12, BYV13, BYV14, BYV15, BYV16
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
PARTS TABLE
PART
BYV12
BYV13
BYV14
BYV15
BYV16
TYPE DIFFERENTIATION
V
R
= 100 V; I
FAV
= 1.5 A
V
R
= 400 V; I
FAV
= 1.5 A
V
R
= 600 V; I
FAV
= 1.5 A
V
R
= 800 V; I
FAV
= 1.5 A
V
R
= 1000 V; I
FAV
= 1.5 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYV12
BYV13
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYV14
BYV15
BYV16
Peak forward surge current
Repetitive peak forward current
Average forward current
Non repetitive reverse avalanche
energy
Junction and storage temperature
range
ϕ
= 180°
I
(BR)R
= 0.4 A
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
E
R
T
j
= T
stg
VALUE
100
400
600
800
1000
40
9
1.5
10
- 55 to + 175
UNIT
V
V
V
V
V
A
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86039
Rev. 1.7, 30-Jul-10
BYV12, BYV13, BYV14, BYV15, BYV16
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery charge
TEST CONDITION
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, dI/dt = 5 A/μs
PART
SYMBOL
V
F
I
R
I
R
t
rr
Q
rr
MIN.
-
-
-
-
-
TYP.
-
1
60
-
-
MAX.
1.5
5
150
300
200
UNIT
V
μA
μA
ns
nC
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
l
100
l
10
I
F
- Forward Current (A)
1
T
j
= 175 °C
T
j
= 25 °C
80
T
L
= constant
60
40
20
0
0
949101
0.1
0.01
0.001
5
10
15
20
25
30
16375
0
0.5
1.0
1.5
2.0
2.5
3.0
l - Lead Length (mm)
V
F
- Forward Voltage (V)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Forward Current vs. Forward Voltage
240
1.6
R
thJA
= 100 K/W
I
FAV
- Average Forward Current (A)
T
j
- Junction Temperature (°C)
200
160
120
80
BYV13
40
0
0
200
400
600
800
BYV15
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
R
thJA
= 100 K/W
PCB: d = 25 mm
V
R
= V
RRM
half
sinewave
V
RRM
BYV12
BYV14
BYV16
V
R
R
thJA
= 45 K/W
I = 10 mm
1000
16376
0
20
40
60
80 100 120 140 160 180
949517
V
R
, V
RRM
- Rev./Rep. Peak Rev. Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 2 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
Document Number: 86039
Rev. 1.7, 30-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
125
BYV12, BYV13, BYV14, BYV15, BYV16
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
V
R
= V
RRM
P
R
- Reverse Power Dissipation (mW)
1000
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
P
R
-Limit
at 80 % V
R
P
R
-Limit
at 100 % V
R
V
R
= V
RRM
I
R
- Reverse Current (μA)
100
10
1
25
16377
50
75
100
125
150
175
16378
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Fig. 5 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature
40
f = 1 MHz
C
D
- Diode Capacitance (pF)
35
30
25
20
15
10
5
0
0.1
1
10
100
16379
V
R
- Reverse Voltage (V)
Fig. 7 - Diode Capacitance vs. Reverse Voltage
Z
thp
- Thermal Resist. for Pulse Cond. (K/W)
1000
V
RRM
= 1000 V
R
thJA
= 100 K/W
100
t
p
/T = 0.5
T
amb
= 25 °C
45 °C
50 °C
100 °C
70 °C
Single
pulse
10
-3
10
-2
10
-1
10
0
10
1
10
0
10
1
0.2
10
0.1
0.02
0.01
1
10
-5
949522
10
-4
t
p
- Pulse Length (s)
I
FRM
- Repetitive Peak
Forward Current (A)
Fig. 8 - Thermal Response
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126
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86039
Rev. 1.7, 30-Jul-10
BYV12, BYV13, BYV14, BYV15, BYV16
Fast Avalanche Sinterglass Diode
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Vishay Semiconductors
Document Number: 86039
Rev. 1.7, 30-Jul-10
3.6 (0.142) max.
20543
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
127
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Disclaimer
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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