BYT86
Vishay Telefunken
Ultra Fast Recovery Silicon Power Rectifier
Features
D
D
D
D
D
Multiple diffusion
High voltage
High current
Ultra fast forward recovery time
Ultra fast reverse recovery time
14282
Applications
Fast rectifiers in S.M.P.S, freewheeling and snubber
diode in motor control circuits
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature range
Test Conditions
Type
Symbol
BYT86–600 V
R
=V
RRM
BYT86–800 V
R
=V
RRM
BYT86–1000 V
R
=V
RRM
I
FSM
I
FRM
I
FAV
T
j
=T
stg
Value
600
800
1000
90
25
8
–55...+150
Unit
V
V
V
A
A
A
°
C
t
p
= 10ms
half sinewave
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction case
Test Conditions
Symbol
R
thJC
Value
2.4
Unit
K/W
Document Number 86036
Rev. 2, 24-Jun-98
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BYT86
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Forward recovery time
Turn on transient
peak voltage
Reverse recovery
y
characteristics
Reverse recovery time
y
Test Conditions
I
F
=8A
I
F
=8A, T
j
=100
°
C
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
F
=8A, di
F
/dt 50A/
m
s
,
Type Symbol Min Typ Max Unit
V
F
1.8
V
V
F
1.8
V
I
R
10
m
A
I
R
0.2 mA
t
fr
350
ns
V
FP
7
V
I
RM
t
IRM
t
rr
t
rr
12
110
150
80
A
ns
ns
ns
x
I
F
=8A, di
F
/dt =–100A/
m
s, V
Batt
=200V
I
F
=8A, di
F
/dt =–100A/
m
s, V
Batt
=200V
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Characteristics
(T
j
= 25
_
C unless otherwise specified)
1000
I
R
– Reverse Current (
m
A )
I
F
– Forward Current ( A )
V
R
= V
R RM
100
100
T
Case
= 25°C
10
10
1
1
0.1
0.1
0
94 9483
0.01
40
80
120
160
200
94 9482
0
0.6
1.2
1.8
2.4
3.0
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 1. Typ. Reverse Current vs. Junction Temperature
10
I
FAV
– Average Forward Current ( A )
Figure 3. Typ. Forward Current vs. Forward Voltage
t
IRM
– Reverse Recovery Time for I
RM
( ns )
150
8
6
R
thJA
=5K/W
R
thJC
=2.4K/W
120
90
4
R
thJA
=10K/W
2
R
thJA
=85K/W
0
0
40
80
120
160
200
60
30
0
0
50
100
150
200
–dI
F
/dt – Forward Current Rate of Change ( A/
m
s )
I
F
= 8A
T
C
=25°C
V
Batt
=200V
94 9481
T
amb
– Ambient Temperature (
°C
)
94 9484
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Reverse Recovery Time for I
RM
vs.
Forward Current Rate of Change
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Document Number 86036
Rev. 2, 24-Jun-98
BYT86
Vishay Telefunken
15
I
RM
– Reverse Recovery Current ( A )
t
rr
– Reverse Recovery Time ( ns )
250
12
200
9
150
6
3
0
0
50
100
150
200
I
F
= 8A
T
C
=25°C
V
Batt
=200V
100
50
0
0
50
100
150
200
I
F
= 8A
T
C
=25°C
V
Batt
=200V
94 9485
–dI
F
/dt – Forward Current Rate of Change ( A/
m
s )
94 9486
–dI
F
/dt – Forward Current Rate of Change ( A/
m
s )
Figure 5. Reverse Recovery Current vs.
Forward Current Rate of Change
Figure 6. Reverse Recovery Time vs.
Forward Current Rate of Change
Dimensions in mm
14276
Document Number 86036
Rev. 2, 24-Jun-98
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BYT86
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 86036
Rev. 2, 24-Jun-98
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