BYT53.
Vishay Telefunken
Very Fast Silicon Mesa Rectifiers
Features
D
D
D
D
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Applications
Very fast rectifiers and switches
Switched mode power supplies
High–frequency inverter circuits
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
BYT53A
BYT53B
BYT53C
BYT53D
BYT53F
BYT53G
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FAV
T
j
=T
stg
Value
50
100
150
200
300
400
50
1.9
–65...+175
Unit
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
Junction and storage temperature range
T
j
= 25
_
C
Parameter
Junction ambient
t
p
=10ms,
half sinewave
l=10mm, T
L
=25
°
C
Maximum Thermal Resistance
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Test Conditions
I
F
=1A
I
F
=1A, T
j
=175
°
C
V
R
=V
RRM
V
R
=V
RRM
, T
j
=150
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
I
R
I
R
t
rr
Min
Typ
Max
1.1
0.9
5
200
50
Unit
V
V
m
A
m
A
ns
Document Number 86030
Rev. 4, 24-Jun-98
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BYT53.
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
100
80
60
l
40
20
0
0
5
10
15
T
L
=constant
20
25
30
15769
2.0
I
FAV
– Average Forward Current ( A )
V
R
= V
R RM
half sinewave
1.6
1.2
0.8
0.4
0
0
20
40
60
80 100 120 140 160 180
T
amb
– Ambient Temperature (
°C
)
R
thJA
=45K/W
l=10mm
l
R
thJA
=100K/W
PCB: d=25mm
94 9552
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
10
240
220
200
180
160
140
120
100
80
60
40
20
0
25
50
P
R
– Reverse Power Dissipation ( mW )
V
R
= V
RRM
BYT53G
BYT53F
BYT53D
BYT53C
BYT53B
BYT53A
I
F
– Forward Current ( A )
R
thJA
=
45K/W
100K/W
160K/W
T
j
= 175°C
1
T
j
= 25°C
0.1
0.01
0.001
75
100
125
150
175
15768
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
F
– Forward Voltage ( V )
15770
T
j
– Junction Temperature (
°C
)
Figure 2. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
Figure 5. Max. Forward Current vs. Forward Voltage
30
C
D
– Diode Capacitance ( pF )
V
R
= V
RRM
T
j
=25°C
24
I
R
– Reverse Current (
m
A )
100
18
10
12
6
0
1
25
15771
50
75
100
125
150
175
94 9456
0.1
1
10
100
T
j
– Junction Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 3. Max. Reverse Current vs.
Junction Temperature
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
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Document Number 86030
Rev. 4, 24-Jun-98
BYT53.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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Document Number 86030
Rev. 4, 24-Jun-98
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