BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Rectification diode
PARTS TABLE
PART
BYT51A
BYT51B
BYT51D
BYT51G
BYT51J
BYT51K
BYT51M
TYPE DIFFERENTIATION
V
R
= 50 V; I
FAV
= 1.5 A
V
R
= 100 V; I
FAV
= 1.5 A
V
R
= 200 V; I
FAV
= 1.5 A
V
R
= 400 V; I
FAV
= 1.5 A
V
R
= 600 V; I
FAV
= 1.5 A
V
R
= 800 V; I
FAV
= 1.5 A
V
R
= 1000 V; I
FAV
= 1.5 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYT51A
BYT51B
BYT51D
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYT51G
BYT51J
BYT51K
BYT51M
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature
range
Non repetitive reverse avalanche
energy
l
(BR)R
= 1 A
On PC board
l = 10mm
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
I
FAV
T
j
= T
stg
E
R
VALUE
50
100
200
400
600
800
1000
50
9
1
1.5
- 55 to + 175
20
UNIT
V
V
V
V
V
V
V
A
A
A
A
°C
mJ
Document Number: 86028
Rev. 1.8, 25-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
153
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
I
F
= 1 A
I
F
= 1 A, T
j
= 175 °C
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBOL
V
F
V
F
I
R
I
R
t
rr
MIN.
-
-
-
-
-
TYP.
0.95
-
-
-
-
MAX
1.1
1
1
100
4
UNIT
V
V
μA
μA
μs
TYPICAL CHARACTERISTICS
(T
amb
= 25
°C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
120
1.6
I
FAV
- Average Forward Current (A)
l
100
80
l
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
l = 10 mm
T
L
= constant
60
40
20
0
0
949101
5
10
15
20
25
30
16324
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
10
1000
V
R
= V
RRM
1
T
j
= 175 °C
0.1
T
j
= 25 °C
0.01
I
R
- Reverse Current (μA)
1.6
2.0
I
F
- Forward Current (A)
100
10
0.001
0
16323
1
0.4
0.8
1.2
25
16325
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
www.vishay.com
154
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86028
Rev. 1.8, 25-Aug-10
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
Standard Avalanche Sinterglass
Diode
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
350
V
R
= V
RRM
300
250
P
R
- Limit at 100 % V
R
200
150
P
R
- Limit at 80 % V
R
100
50
0
25
50
75
100
125
150
175
45
C
D
- Diode Capacitance (pF)
40
35
30
25
20
15
10
5
0
0.1
1
10
f = 1 MHz
100
16326
T
j
- Junction Temperature (°C)
16327
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Document Number: 86028
Rev. 1.8, 25-Aug-10
3.6 (0.142) max.
20543
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
155
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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