BYT41
Vishay Telefunken
Fast Soft Recovery Rectifier
Features
D
D
D
D
D
D
Controlled avalanche characteristics
Miniature axial leaded
Glass passivated
Hermetically sealed glass envelope
Low reverse current
High reverse voltage
95 10526
Applications
General purpose rectifier
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
Symbol
V
R
=V
RRM
Value
50
100
200
400
600
800
1000
30
1.25
10
–55...+175
Unit
V
V
V
V
V
V
V
A
A
mJ
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
t
p
=8.3 ms, half sinewave
Lead length l = 10 mm,
T
L
= 25
°
C
I
(BR)R
=1A, inductive load
I
FSM
I
FAV
E
R
T
j
=T
stg
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
Lead length l = 10 mm, T
L
= constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
60
110
Unit
K/W
K/W
Document Number 86024
Rev. 3, 24-Jun-98
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BYT41
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Reverse breakdown
voltage
Test Conditions
I
F
= 1 A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=150
°
C
I
R
=100
m
A
Type
Symbol
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
Min
Typ
Max
1.1
5
150
Unit
V
m
A
m
A
V
V
V
V
V
V
V
m
s
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
50
100
200
400
600
800
1000
2
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
I
FAV
– Average Forward Current ( A )
100
80
60
l
40
20
0
0
5
10
15
T
L
=constant
20
25
30
96 12135
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160 180
T
amb
– Ambient Temperature (
°C
)
BYT41M
BYT41A
V
R
= V
R RM
f 1kHz
R
thJA
110K/W
PC Board
v
v
l
96 12151
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 2. Max. Average Forward Current vs. Ambient
Temperature
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Document Number 86024
Rev. 3, 24-Jun-98
BYT41
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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Document Number 86024
Rev. 3, 24-Jun-98
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