BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Dual Ultrafast Soft Recovery Rectifier
Reverse Voltage
100 to 200V
Forward Current
10A
Reverse Recovery Time
20ns
ITO-220AB (BYQ28EF, UGF10 Series)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
1
0.160 (4.06)
0.140 (3.56)
PIN
2
3
0.603 (15.32)
0.573 (14.55)
1
TO-220AB (BYQ28E, UG10 Series)
0.415 (10.54) MAX.
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
PIN
2
3
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
PIN 3
PIN 2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 3
PIN 2
CASE
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-263AB (BYQ28EB, UGB10 Series)
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.33
(8.38)
Mounting Pad Layout TO-263AB
0.42
(10.66)
Dimensions in inches
and (millimeters)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591 (15.00)
0.055 (1.40)
0.047 (1.19)
0.63
(17.02)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.08
(2.032)
0.24
(6.096)
0.027 (0.686)
0.12
(3.05)
PIN 1
PIN 2
K - HEATSINK
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High reverse energy capability
• Excellent high temperature switching
• High temperature soldering guaranteed: 250°C/10
seconds at terminals
• Glass passivated chip junction
• Soft recovery characteristics
Document Number 88549
03-Jul-02
Mechanical Data
Case:
JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
www.vishay.com
1
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
UG10BCT
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
UG10CCT
UG10DCT
Unit
V
V
V
A
BYQ28E-100 BYQ28E-150 BYQ28E-200
100
100
100
150
150
150
10
5
55
0.2
8
–40 to +150
0.2
4500
(NOTE 1)
3500
(NOTE 2)
1500
(NOTE 3)
200
200
200
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Total device
at T
C
= 100°C
Per leg
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
Repetitive peak reverse current per leg at t
p
= 100µs
Electrostatic discharge capacitor voltage,
Human body model: C = 250pF, R = 1.5kΩ
Operating junction and storage temperature range
Non-repetitive peak reverse current per leg
at t
p
= 100µs
RMS Isolation voltage (BYQ28EF, UGF types)
from terminals to heatsink with t = 1 second, RH
≤
30%
I
FSM
I
RRM
V
C
T
J
, T
STG
I
RSM
A
A
KV
°C
A
V
ISOL
V
Electrical Characteristics
(T
Parameter
Maximum instantaneous forward voltage
at I
F
= 10A,
at I
F
= 5A,
at I
F
= 5A,
Maximum reverse current per leg
at working peak reverse voltage
(Note 4)
C
= 25°C unless otherwise noted)
Symbol
per leg
(Note 4)
T
J
= 25°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 100°C
Value
1.25
1.10
0.895
10
200
25
20
9
Unit
V
F
V
µA
ns
ns
nC
I
R
t
rr
t
rr
Q
rr
Maximum reverse recovery time per leg at
I
F
= 1.0A, di/dt = 100A/µs, V
R
= 30V, I
rr
= 0.1 I
RM
Maximum reverse recovery time per leg at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Maximum stored charge per leg
I
F
= 2A, di/dt = 20A/µs, V
R
= 30V, I
rr
= 0.1 I
RM
Thermal Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
UG10
BYQ28E
50
4.5
UGF10
BYQ28EF
55
6.7
UGB10
BYQ28EB
50
4.5
Unit
°C/W
°C/W
Symbol
R
ΘJA
R
ΘJC
Typical thermal resistance — junction to ambient
— junction to case
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88549
03-Jul-02
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Forward Current Derating Curve
15
Resistive or Inductive Load
100
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Peak Forward Surge Current (A)
T
C
= 105°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Current (A)
10
10
5
0
1
0
50
100
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 H
Z
Typical Instantaneous
Forward Characteristics Per Leg
Pulse Width = 300µs
1% Duty Cycle
10
T
J
= 125°C
1.0
T
J
= 100°C
Typical Reverse Characteristics Per Leg
I
R
– Instantaneous Reverse Current (mA)
1000
I
F
– Instantaneous Forward Current (A)
100
T
J
= 125°C
100
100°C
10
0.1
T
J
= 25°C
1.0
25°C
0.1
20
40
60
80
100
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Reverse Switching
Characteristics Per Leg
Stored Charge/Reverse Recovery Time
(nC/ns)
50
@2A, 20A/µs
100
Typical Junction Capacitance Per Leg
T
J
= 125°C
f = 1.0 MH
Z
V
sig
= 50mVp-p
30
@1A, 100A/µs
20
@5A, 50A/µs
@5A, 50A/µs
pF – Junction Capacitance
t
rr
Q
rr
100
125
40
10
@1A, 100A/µs
10
@2A, 20A/µs
0
25
50
75
1
0.1
1
10
100
Junction Temperature (°C)
Document Number 88549
03-Jul-02
Reverse Voltage (V)
www.vishay.com
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