BYG24
Vishay Semiconductors
Fast Avalanche SMD Rectifier
Features
•
•
•
•
•
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Wave and reflow solderable
15811
Applications
Freewheeling diodes in SMPS and converters
Snubber diodes
Parts Table
Part
BYG 24 D
BYG 24 G
BYG 24 J
Type differentiation
V
R
= 200 V @ I
FAV
= 1.5 A
V
R
= 400 V @ I
FAV
= 1.5 A
V
R
= 600 V @ I
FAV
= 1.5 A
DO-214AC
DO-214AC
DO-214AC
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
Part
BYG 24 D
BYG 24 G
BYG 24 J
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I
(BR)R
= 1 A, T
j
= 25 °C
t
p
= 10 ms, half-sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
T
j
= T
stg
E
R
Value
200
400
600
30
1.5
- 55 to + 150
20
Unit
V
V
V
A
A
°C
mJ
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction case
Junction ambient
epoxy glass hard tissue 35
µm
*
17
cooper area per
electrode
epoxy glass hard tissue 35
&muMm * 50 mm cooper area
per electrode
2
Test condition
Part
Symbol
R
thJC
R
thJA
Value
25
150
Unit
K/W
K/W
mm
2
R
thJA
125
K/W
Document Number 86067
Rev. 1.2, 19-Oct-04
www.vishay.com
1
BYG24
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Breakdown voltage
I
F
= 1 A
I
F
= 1.5 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100
µA
BYG 24 D
BYG 24 G
BYG 24 J
Reverse recovery time
I
F
= 0.5 A; I
R
= 1 A; i
R
= 0.25 A
Test condition
Part
Symbol
V
F
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
200
400
600
140
Min
Typ.
Max
1.15
1.25
1
10
Unit
V
V
µA
µA
V
V
V
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
P
R
– Reverse Power Dissipation ( mW )
60
R
thJA
=
50
40
30
20
10
0
25
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
125K/W
155K/W
175K/W
P
R
–Limit
@100%V
R
V
R
= V
RRM
100.00
I
F
– Forward Current ( A )
10.00
T
j
=150°C
1.00
T
j
=25°C
0.10
P
R
–Limit
@80%V
R
0.01
0.0
16826
0.5
1.0
1.5
2.0
2.5
3.0
16
V
F
– Forward Voltage ( V )
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 3. Forward Current vs. Forward Voltage
100
I
FAV
– Average Forward Current ( A )
I
R
– Reverse Current ( mA )
1.8
V
R
= V
RRM
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
16827
V
R
=V
RRM
half sinewave
R
thJA
v25K/W
thJA=
25K/W
10
R
thJA=
125K/W
R
thJA=
150K/W
1
16825
0
20
40
60
80 100 120 140 160
T
j
– Junction Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Average Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 86067
Rev. 1.2, 19-Oct-04
BYG24
Vishay Semiconductors
30
C
D
– Diode Capacitance ( pF )
f=1MHz
25
20
15
10
5
0
0.1
16828
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Figure 5. Diode Capacitance vs. Reverse Voltage
Dimensions in inches (millimeters)
5.3 +0.2 / -0.4
4.4 +0.1 / -0.2
ISO Method E
technical drawings
according to DIN
specifications
2.15 ± 0.15
0.1 ± 0.07
3 +0.3 / -0.5
2.6 +0.2 / -0.3
1.5 +0.2 / -0.1
0.2
Plastic case JEDEC DO 214
similar to SMA
Cathode indicated
by
a
band
14275-1
Document Number 86067
Rev. 1.2, 19-Oct-04
www.vishay.com
3
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