BYG23M
Vishay Telefunken
Fast Silicon Mesa SMD Rectifier
Features
D
D
D
D
D
Glass passivated junction
Low reverse current
High reverse voltage
Fast reverse recovery time
Wave and reflow solderable
Applications
Freewheeling diodes in SMPS and converters
Snubber diodes
15 811
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current
t
p
=10ms, half sinewave
Average forward current
T
amb
= 65
°
C
Junction and storage temperature range
Pulse energy in avalanche mode,
I
(BR)R
=1A
non repetitive (inductive load switch off)
Type
Symbol
V
R
=
V
RRM
I
FSM
I
FAV
T
j
=T
stg
E
R
Value
1000
30
1.5
–55...+150
20
Unit
V
A
A
°
C
mJ
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction case
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue,
17mm
2
35
m
m Cu
mounted on epoxy–glass hard tissue,
50mm
2
35
m
m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
),
50mm
2
35
m
m Cu
Symbol
R
thJC
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Document Number 86062
Rev. 1, 13-Aug-99
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BYG23M
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Breakdown voltage
Reverse recovery time
Test Conditions
I
F
=1.0A
I
F
=1.0A, T
J
= 150
°
C
V
R
=V
RRM
V
R
=V
RRM
, T
j
=125
°
C
I
R
= 100
m
A
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
I
R
I
R
V
(BR)R
t
rr
Min
Typ
Max
1.7
1.35
5
50
75
Unit
V
V
m
A
m
A
V
ns
1000
Characteristics
(T
j
= 25
_
C unless otherwise specified)
P
R
– Reverse Power Dissipation ( mW )
100
160
R
thJA
=
140
120
100
80
60
40
80%
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16096
V
R
= V
RRM
125K/W
175K/W
100%
I
F
– Forward Current ( A )
10
T
j
=150°C
T
j
=25°C
1
0.1
V
F
– Forward Voltage ( V )
25
16094
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
Figure 1. Max. Forward Current vs. Forward Voltage
1.6
I
FAV
– Average Forward Current ( A )
1.4
1.2
1.0
0.8
0.6
0.4
150K/W
0.2
0
0
16092
Figure 3. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
V
R
= V
RRM
I
R
– Reverse Current (
m
A )
V
R
= V
R RM
half sinewave
R
thJA
=
25K/W
125K/W
100
10
25
50
75
100
125
150
16095
1
25
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Max. Reverse Current vs. Junction Temperature
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Document Number 86062
Rev. 3, 09-Aug-99
BYG23M
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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Document Number 86062
Rev. 3, 09-Aug-99
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