The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal
case,
Intented for use in switching and linear applications in military and industrial equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
J
T
S
Ratings
Collector-Emitter Voltage (I
B
= 0)
Collector-Base Voltage (I
E
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Power Dissipation
Value
250
350
10
I
C
I
CM
t
p
= (10 ms)
@ T
C
= 25°
60
80
16
Unit
V
V
V
A
A
W
°C
Junction Temperature
Storage Temperature
350
200
-55 to +200
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
0.5
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
BUR52
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
I
CEO
I
EBO
I
CBO
Ratings
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Test Condition(s)
V
CE
= 250 V, (I
B
= 0)
V
BE
= 7 V, (I
C
= 0)
T
CASE
= 25°C
V
CB
= 350 V, (I
E
= 0)
T
CASE
= 125°C
V
C
= 350 V, (I
E
= 0)
I
C
= 200 A
I
C
= 10 mA, (I
C
= 0)
I
C
= 25 A, I
B
= 2 A
I
C
= 40 A, I
B
= 4 A
I
C
= 25 A, I
B
= 2 A
I
C
= 40 A, I
B
= 4 A
V
CE
= 4 V, I
C
= 5 A
V
CE
= 4 V, I
C
= 40 A
Min
-
-
-
-
250
10
-
-
-
-
20
15
17.5
-
-
-
-
40
Typ
-
-
-
-
-
-
-
0.7
-
1.5
-
-
-
10
0.3
1.2
0.2
-
Max
1
0.2
0.2
Unit
mA
µA
mA
2
-
-
1
V
1.5
1.8
2
100
-
-
16
1
2
µs
0.6
-
A
A
MHz
µs
-
V
V
V
V
CEO(SUS)
V
EBO
V
CE(SAT)
Collector-Emitter Sustaining
Voltage (*)
Emitter-Base Voltage
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation Voltage
(*)
DC Current Gain (*)
Second Breakdown Collector
Current
Transition - Frequency
Turn-on time
Storage Time
Fall Time
Clamped E
s/b
Collector Current
V
BE(SAT)
h
FE
I
s/b
f
T
t
on
t
s
f
f
V
CE
= 20 V, t = 1 s
V
CE
= 5 V, I
C
= 1 A
f = 1 MHz
V
CC
= 100 V
I
C
= 40 A ; I
B1
= 4 A
V
CC
= 100 V
I
C
= 40 A
I
B1
= 4 A, I
B2
= -4 A
V
clamp
= 250 V
L = 500 µH
(*) Pulse duration = 300
µs,
Duty Cycle
∠
1.5 %
COMSET SEMICONDUCTORS
2/3
BUR52
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
F
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
max
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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