INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BUP40
DESCRIPTION
·High
Collector Current-I
C
= -
6A
·Low
Collector Saturation Voltage -
: V
CE(sat)
= -0.4V(Max)@ I
C
=
3A, I
B
=
-0.1A
·High
Switching Speed
·Complement
to Type BUP41
B
APPLICATIONS
·For
audio amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-60
V
V
CEO
Collector-Emitter Voltage
-50
V
V
EBO
Emitter-Base Voltage
-6
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-6
A
P
C
10
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BUP40
MAX
UNIT
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= -3A; I
B
= -0.1A
B
-1.1
V
V
BE(
sat
)
I
CBO
Base-Emitter Saturation Voltage
I
C
= -3A; I
B
= -0.1A
B
-1.4
V
μA
Collector Cutoff Current
V
CB
= -40V; I
E
= 0
-1.0
I
EBO
Emitter Cutoff Current
V
EB
= -4V; I
C
= 0
-1.0
μA
h
FE-1
DC Current Gain
I
C
= -1A; V
CE
= -2V
100
500
h
FE-2
DC Current Gain
I
C
= -5A; V
CE
= -5V
40
f
T
Current-Gain—Bandwidth Product
I
C
= -1A; V
CE
= -5V
150
MHz
C
OB
Output Capacitance
I
E
= 0; V
CB
= -10V
40
pF
isc Website：www.iscsemi.cn
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