INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUL810
DESCRIPTION
·High
Voltage Capability
·High
Switching Speed
APPLICATIONS
Designed for use in lighting applications and low cost
swith-mode power supplies.
·Electronic
transformer for halogen lamps
·Electronic
ballasts for fluorescent lighting
·Switch
mode power supplies
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak ( tp <5 ms )
Base Current-Continuous
Base Current-peak ( tp <5 ms )
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
500
9
15
22
5
10
125
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction-Case
Thermal Resistance,Junction-Ambient
MAX
1.0
30
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS
)
V
(BR)EBO
V
CE(
sat
)-1
V
CE(
sat
)-2
V
CE(
sat
)-3
V
BE(
sat
)
V
BE(
sat
)
I
CES
I
CEO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 100mA ; L= 25mH
I
E
= 10mA; I
C
= 0
I
C
= 5A ;I
B
= 1A
I
C
= 8A ;I
B
= 1.6A
I
C
= 12A ;I
B
= 2.4A
I
C
= 5A ;I
B
= 1A
I
C
= 8A ;I
B
= 1.6A
V
CE
=1000V; V
BE
= 0;
V
CE
=1000V; V
BE
= 0;T
C
=125℃
V
CE
= 450V; I
B
= 0
I
C
= 5A ; V
CE
= 5V
I
C
= 10mA ; V
CE
= 5V
10
10
MIN
450
9
TYP.
BUL810
MAX
UNIT
V
V
1.0
1.5
5.0
1.3
1.6
0.1
0.5
0.25
40
V
V
V
V
V
mA
mA
Switching Times (inductive load)
t
s
t
f
Storage Time
Fall Time
1.5
55
2.3
110
μs
ns
I
C
= 8A ;I
B1
= 1.6A;V
BE(off)
= -5V
R
BB
= 0.4Ω, V
CL
= 350V,
L= 200μH
isc Website：www.iscsemi.cn
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