INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUL742C
DESCRIPTION
·Collector–Emitter
Breakdown Voltage
: V
(BR)CEO
= 400V(Min.)
·Collector
Saturation Voltage
: V
CE(
sat
)
= 0.2V(Max) @ I
C
= 0.8A
APPLICATIONS
·Designed
for electronic lamp ballast circuits switch-mode
power supplies applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEW
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
900
500
400
11
5
7.5
2.5
4
50
150
-65~150
UNIT
V
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.5
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CES
h
FE-1
h
FE-2
h
FE-3
h
FE-4
C
OB
V
CEW
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
Output Capacitance
Collector-Emitter Working Voltage
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 500mA; L= 125mH,
I
measure
= 100mA
I
E
= 1mA; I
C
= 0
I
C
= 0.8A; I
B
= 0.2A
I
C
= 2.5A; I
B
= 0.8A
I
C
= 0.8A; I
B
= 0.2A
I
C
= 2.5A; I
B
= 0.8A
V
CES
= 900V
;
V
EB
=0
V
CES
= 900V
;
V
EB
=0,T
C
= 150℃
I
C
= 10mA; V
CE
= 2V
I
C
= 0.8A; V
CE
= 2V
I
C
= 2.5A; V
CE
= 2V
I
C
= 5A; V
CE
= 2V
I
E
= 0; V
CB
= 10V; f= 1MHz
V
S
= 50V; L= 1mH; I
C
= 2.5A;
I
B1
= -I
B2
= 0.5A; V
BE(off)
= -5V
I
C
= 0.2A; V
CE
= 10V; f= 1MHz
500
4
15
15
7
4
MIN
400
11
BUL742C
TYP.
MAX
UNIT
V
V
0.2
0.4
1.0
1.2
10
200
V
V
V
V
μA
60
pF
V
MHz
isc Website：www.iscsemi.cn
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