Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUL742
DESCRIPTION
·With
TO-220C package
·High
voltage capability
·Very
high switching speed
APPLICATIONS
·Electronic
ballast for fluorescent
lighting
·Switch
mode power supplies
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak (t
p
<5 ms)
Base current
Base current-Peak (t
p
<5 ms)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
400
12
4
8
2
4
70
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.78
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat
I
CES
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=100mA; L=25mH
I
E
=1mA; I
C
=0
I
C
=1A ;I
B
=0.2A
I
C
=2A ;I
B
=0.4A
I
C
=4A ;I
B
=0.8A
I
C
=2A ;I
B
=0.4A
V
CE
=900V; V
BE
=0
I
C
=250mA ; V
CE
=5V
I
C
=2A ; V
CE
=5V
35
10
MIN
400
12
TYP.
BUL742
MAX
UNIT
V
0.5
1.0
1.5
1.5
100
70
35
V
V
V
V
μA
Switching times resistive load
t
s
t
f
Storage time
Fall time
V
CC
=125V ,I
C
=0.5A
I
B1
=-I
B2
=45mA
t
p
=300μs
11
0.25
μs
μs
2
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