INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUL59
DESCRIPTION
·Collector–Emitter
Sustaining Voltage
: V
CEO(SUS)
= 400V(Min.)
·Collector
Saturation Voltage
: V
CE(
sat
)
= 0.5V(Max) @ I
C
= 2A
·High
Speed Switching
APPLICATIONS
·Designed
for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
850
400
9
8
16
4
8
90
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-A
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.39
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CES
I
EBO
h
FE-1
h
FE-2
h
FE-3
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 10mA; L= 25mH
I
C
= 2A ;I
B
= 0.4A
I
C
= 5A ;I
B
= 1A
I
C
= 2A ;I
B
= 0.4A
I
C
= 5A ;I
B
= 1A
V
CE
= RatedV
CES;
V
BE
=0
V
CE
= RatedV
CES;
V
BE
=0,T
C
= 125℃
V
EB
= 9V; I
C
= 0
I
C
= 2A; V
CE
= 5V
I
C
= 5A; V
CE
= 5V
I
C
= 8A; V
CE
= 10V
8
6
4
MIN
400
TYP.
BUL59
MAX
UNIT
V
0.5
1.5
1.2
1.6
0.2
0.5
0.1
40
30
V
V
V
V
mA
mA
Switching Times, Inductive Load
t
s
t
f
Storage Time
Fall Time
I
C
= 2A; V
CC
= 250V;
I
B(
on
)
= 0.4A; R
BB
= 0Ω
V
BE(off)
= -5V; L= 200μH
0.8
0.15
μs
μs
isc Website：www.iscsemi.cn
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