Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUL56B
DESCRIPTION
・With
TO-220C package
・High
voltage
・Fast
switching
・High
energy rating
APPLICATIONS
・Designed
for use in electronic
ballast applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
emitter
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Operating and storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
250
100
10
18
25
5
85
-55~150
UNIT
V
V
V
A
A
A
W
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
ob
PARAMETER
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdwon voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=1A ;I
B
=0.1A
I
C
=7A ;I
B
=0.7A
I
C
=12A; I
B
=1.2A
I
C
=7A; I
B
=0.7A
I
C
=12A; I
B
=1.2A
V
CB
=250V; I
E
=0
T
C
=125℃
V
CE
=90V ;I
B
=0
V
EB
=9V; I
C
=0
T
C
=125℃
I
C
=0.3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=12A ; V
CE
=1V
I
C
=0.2A ; V
CE
=4V
V
CB
=100V ;f=1MHz
30
25
5
20
100
MIN
100
250
10
TYP.
BUL56B
MAX
UNIT
V
V
V
0.2
0.6
1.2
1.2
1.8
10
100
100
10
100
90
60
V
V
V
V
V
μA
μA
μA
MHz
pF
2
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