Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
voltage,high speed
APPLICATIONS
・Electronic
ballasts for
fluorescent lighting
・Switch
mode power supplies
・Electronic
transformer for
halogen lamp
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUL510
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
Base current-Peak
Total power dissipation
Maximum operating junction temperature
Storage temperature
t
p
<5ms
T
C
=25℃
t
p
<5ms
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
450
9
10
18
3.5
7
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat-1
V
BEsat-2
I
CES
I
CEO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdwon voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=100mA ; I
B
=0; L=25mH
I
E
=10mA ;I
C
=0
I
C
=3A; I
B
=0.6A
I
C
=4A ;I
B
=0.8A
I
C
=5A ;I
B
=1.25A
I
C
=3A ;I
B
=0.6A
I
C
=5A; I
B
=1.25A
V
CE
=1000V; V
BE
=0
T
C
=125℃
V
CE
=450V; I
B
=0
I
C
=1A ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
15
10
MIN
450
9
TYP.
BUL510
MAX
UNIT
V
V
0.8
1.0
1.5
1.2
1.5
100
500
250
45
V
V
V
V
V
μA
μA
Switching times inductive load
t
s
t
f
Storage time
Fall time
3.4
0.15
μs
μs
I
C
=4A ;V
CL
=300V
I
B1
=0.8A;I
B2
=-1.6A
L=200μH
2
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