INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUL382
DESCRIPTION
·Collector–Emitter
Sustaining Voltage
: V
CEO(SUS)
= 400V(Min.)
·Low
Collector Saturation Voltage
: V
CE(
sat
)
= 0.5V(Max) @ I
C
= 1A
·Very
High Switching Speed
APPLICATIONS
·Designed
for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak t
p
<5ms
Base Current-Continuous
Base Current-peak t
p
<5ms
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
800
400
9
5
8
2
4
70
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-A
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.78
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CE
(sat)-1
V
CE
(sat)-2
V
CE
(sat)-3
V
BE
(sat)-1
V
BE
(sat)-2
I
CES
I
CEO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 100mA; L= 25mH
I
E
= 10mA; I
C
= 0
I
C
= 1A; I
B
= 0.2A
B
BUL382
MIN
400
9
TYP.
MAX
UNIT
V
V
0.5
0.7
1.1
1.1
1.2
0.1
0.5
0.25
8
10
V
V
V
V
V
mA
mA
I
C
= 2A; I
B
= 0.4A
B
I
C
= 3A; I
B
= 0.8A
B
I
C
= 1A; I
B
= 0.2A
B
I
C
= 2A; I
B
= 0.4A
B
V
CE
= 800V
;
V
BE
= 0
V
CE
= 800V
;
V
BE
= 0, T
C
= 125℃
V
CE
= 400V; I
B
= 0
I
C
= 2A; V
CE
= 5V
I
C
= 10mA; V
CE
= 5V
Switching Times, Resistive Load
t
on
t
s
t
f
Turn-On Time
Storage Time
Fall Time
I
C
= 2A; I
B1
= -I
B2
= 0.4A;
V
CC
= 250V; t
p
= 30μs
1.0
2.5
0.8
μs
μs
μs
isc Website：www.iscsemi.cn
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